基于共振隧穿二极管设计实现的Ka波段振荡源

刘军; 顾国栋; 刘博文; 李亚明; 梁士雄; 宋瑞良; 刘宁

doi:10.12263/DZXB.20250571

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基于共振隧穿二极管设计实现的Ka波段振荡源

科研通信 | 更新时间：2026-02-05

- 基于共振隧穿二极管设计实现的Ka波段振荡源
- The Design and Realization of Ka-Band Oscillator Based on Resonant Tunneling Diode
- 电子学报 2025年53卷第10期页码：3773-3780
- 作者机构：
  
  1.中国电子科技集团公司第五十四研究所北京研发中心，北京 100041
  2.中国电子科技集团公司第十三研究所，河北石家庄 050050
  3.天津大学微电子学院，天津 300072
- 作者简介：
  
  [ "刘军男，1989年8月出生于山东省寿光市.中国电子科技集团公司第五十四研究所高级工程师.主要研究方向为太赫兹芯片设计、太赫兹封装技术、太赫兹通信系统等.E-mail: lj_bit@163.com" ]
  [ "宋瑞良男，1980年8月出生于天津市.中国电子科技集团公司第五十四研究所正高级工程师.主要研究方向为太赫兹射频前端、太赫兹系统及应用等.E-mail: songruiliang@hotmail.com" ]
- 基金信息：
- DOI：10.12263/DZXB.20250571
  中图分类号： TN43;TN753.94
- 收稿：2025-06-28，
  
  修回：2025-09-20，
  
  纸质出版：2025-10-25
- 稿件说明：
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刘军, 顾国栋, 刘博文, 等. 基于共振隧穿二极管设计实现的Ka波段振荡源[J]. 电子学报, 2025, 53(10): 3773-3780.

LIU Jun, GU Guo-dong, LIU Bo-wen, et al. The Design and Realization of Ka-Band Oscillator Based on Resonant Tunneling Diode[J]. Acta Electronica Sinica, 2025, 53(10): 3773-3780.
刘军, 顾国栋, 刘博文, 等. 基于共振隧穿二极管设计实现的Ka波段振荡源[J]. 电子学报, 2025, 53(10): 3773-3780. DOI：10.12263/DZXB.20250571

LIU Jun, GU Guo-dong, LIU Bo-wen, et al. The Design and Realization of Ka-Band Oscillator Based on Resonant Tunneling Diode[J]. Acta Electronica Sinica, 2025, 53(10): 3773-3780. DOI：10.12263/DZXB.20250571

摘要

目前Sub-6 GHz频段资源日益稀缺，推动了毫米波在5G/6G通信领域的研究，低相位噪声、高稳定度的毫米波振荡器的研究与开发具有重要的科研价值和应用前景.本文采用具有负阻特性的共振隧穿二极管（Resonant Tunnel

ing Diode，RTD）设计实现了一款Ka波段MMIC（单片微波集成电路）振荡源芯片，有效降低了振荡电路的设计难度.RTD是一种基于量子隧穿效应的半导体器件，双势垒单势阱（Double Barrier Quantum Well，DBQW）结构是该器件最典型的结构，其中势垒由宽带隙材料构成，势阱由窄带隙的材料构成.RTD同时具有非线性特性和负阻特性，通过改变偏置电压可以分别实现源和探测器.文中通过比较GaAs和InP外延材料的特性，最终采用InP材料体系，通过优化外延材料结构设计，研制出的RTD器件峰谷电流比为3.9，峰值电流密度为290 kA/cm

. 该振荡电路采用InP衬底设计实现，主要电路结构包括RTD、共面波导、金属-绝缘体-金属电容（去耦电容和隔直电容）和抑制电阻等. 去耦电容用作射频信号对地短路，以避免射频功率被抑制电阻消耗；隔直电容用于防止在片测量期间直流信号输入频谱分析仪导致仪器毁坏；抑制电阻用于抑制低频偏置振荡.RTD的本征电容与使用短路传输线实现的等效电感一起组成LC振荡网络，产生所需的振荡频率.采用薄膜NiCr电阻来实现抑制电阻，去耦电容和隔直电容采用Si

实现.振荡器在片测试结果表明：基波振荡频率为30.67 GHz，输出功率约为-2.2 dBm，相位噪声为-87 dBc/Hz@1 MHz 和-114 dBc/Hz@10 MHz，可调带宽0.72 GHz，FoM为-169.7 dBc/Hz，电路直流总功耗71.3 mW，芯片面积0.39 mm

.仿真结果与实测结果之间的差异可能是由于器件加工误差、短路线偏差以及器件等效电路模型不够精确等原因.本文研究的振荡源芯片在输出功率和芯片面积方面有一定的优势，与国外采用相同工艺实现的振荡源性能之间还有一定的差距.后续将通过优化材料结构、改进电路设计、合理设计抑制电阻阻值等手段进一步优化振荡源的性能.本文研究的基于共振隧穿二极管实现的电路形式的振荡芯片属于国内首次报道，且该方式有望应用于实现太赫兹频段振荡源.

Abstract

Currently

the resources in frequency band of Sub-6 GHz are increasingly scarce

which promotes the research of millimeter wave in 5G/6G communication field. As a key component to determine the communication quality and imaging accuracy

the research and development of millimeter-wave oscillator with low phase noise and high stability has important scientific research value and application prospect. This study presents a Ka-band MMIC oscillator chip based on resonant tunneling diodes (RTDs) with negative resistance characteristics

which effectively simplify oscillator circuit design. RTD is a semiconductor device based on quantum tunneling effect

with a double-barrier single-quantum-well (DBQW) structure as their most representative configuration—where the barriers are composed of wide-bandgap materials and the well of narrow-bandgap materials. RTDs exhibit both nonlinear and negative resistance properties

enabling them to operate both as an oscillator and detector by changing the bias voltage. After comparing GaAs and InP epitaxial materials

the InP syste

m was selected for its superior performance. Through optimized epitaxial structure

the fabricated RTD achieved a peak-to-valley current ratio of 3.9 and a peak current density of 290 kA/cm². The oscillator circuit

implemented on an InP substrate

integrates a coplanar waveguide

metal-insulator-metal (MIM) capacitors (for decoupling and DC blocking)

and suppression resistors. The decoupling capacitor shorts RF signals to ground to prevent power dissipation

while the DC-blocking capacitor protects spectrum analyzers from damage during on-wafer measurements. The low-frequency bias oscillations are suppressed by shunt resistor. The intrinsic capacitance of the RTD

combined with an equivalent inductance realized by a shorted transmission line

forms an LC oscillation network to generate the desired frequency. A thin film NiCr resistor is used for realizing stabilizing resistor. The MIM capacitor are realized by Si

. The On-wafer testing results show fundamental oscillation frequency of 30.67 GHz

with an output power of -2.2 dBm

phase noise of -87 dBc/Hz@1 MHz and -114 dBc/Hz@10 MHz

a tuning bandwidth of 0.72 GHz

a figure of merit (FoM) of -169.7 dBc/Hz

and a total DC power consumption of 71.3 mW

and the chip area is 0.39 mm². The difference between simulation and experimental results may stem from fabrication tolerances

transmission line deviations

and inaccuracies device equivalent circuit model of RTD.Compared with other Ka-band oscillator

this study has a higher output power and a smaller chip area

and there is still a gap between the performance of the oscillator implemented by the same process in foreign. The performance of the oscillator will be improved by optimizing the material structure

improving circuit design

and optimizing the suppression resistance values. The oscillator chip based on resonant tunneling diode is the first report in China

and this method is expected to be applied to realize terahertz frequency band oscillator.

关键词

Keywords

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