亚20 nm FinFET工艺温度传感器低温总剂量效应研究

皮辉斌; 吴龙胜; 文溢; 罗登; 喻国芳

doi:10.12263/DZXB.20250733

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亚20 nm FinFET工艺温度传感器低温总剂量效应研究

学术论文 | 更新时间：2026-04-24

- 亚20 nm FinFET工艺温度传感器低温总剂量效应研究
- Total Ionizing Dose Effects at Cryogenic Temperatures on a Sub-20 nm FinFET Temperature Sensor
- 电子学报 2025年53卷第12期页码：4665-4670
- 作者机构：
  
  1.西安电子科技大学集成电路学部，陕西西安 710071
  2.国防科技大学计算机学院，湖南长沙 410073
- 作者简介：
  
  [ "皮辉斌男，1993年出生于湖南省常德市.现为西安电子科技大学集成电路学部博士研究生.主要研究方向为集成电路辐照机理、模型与加固技术.E-mail: pihuibin@126.com" ]
  [ "吴龙胜男，1968年出生于安徽省安庆市.现为西安电子科技大学华山领军教授、二级教授、博士生导师，享受国务院政府特殊津贴.主要研究方向为SoC设计技术、集成电路封装设计、抗辐射加固技术、器件建模与模拟技术.E-mail: lswu@xidian.edu.cn" ]
  [ "文溢男，1992年出生于湖南省益阳市.现为国防科技大学计算机学院博士研究生.主要研究方向为模拟集成电路设计与抗辐照加固设计等.E-mail: wenyi19920312@126.com" ]
  [ "罗登男，1992年出生于湖北省荆州市.现为国防科技大学计算机学院助理研究员.主要研究方向为抗辐射数模混合集成电路设计，包括数模/模数转换器、锁相环等.E-mail: luod14@163.com" ]
  [ "喻国芳男，1993年出生于贵州省仁怀市.现为国防科技大学计算机学院助理研究员.主要研究方向为集成电路辐照机理、模型与加固技术.E-mail: yugf24@nudt.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62304258)
- DOI：10.12263/DZXB.20250733
  中图分类号： TN406
- 收稿：2025-08-21，
  
  录用：2025-12-23，
  
  纸质出版：2025-12-25
- 稿件说明：
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皮辉斌, 吴龙胜, 文溢, 等. 亚20 nm FinFET工艺温度传感器低温总剂量效应研究[J]. 电子学报, 2025, 53(12): 4665-4670.

PI Hui-bin, WU Long-sheng, WEN Yi, et al. Total Ionizing Dose Effects at Cryogenic Temperatures on a Sub-20 nm FinFET Temperature Sensor[J]. Acta Electronica Sinica, 2025, 53(12): 4665-4670.
皮辉斌, 吴龙胜, 文溢, 等. 亚20 nm FinFET工艺温度传感器低温总剂量效应研究[J]. 电子学报, 2025, 53(12): 4665-4670. DOI：10.12263/DZXB.20250733

PI Hui-bin, WU Long-sheng, WEN Yi, et al. Total Ionizing Dose Effects at Cryogenic Temperatures on a Sub-20 nm FinFET Temperature Sensor[J]. Acta Electronica Sinica, 2025, 53(12): 4665-4670. DOI：10.12263/DZXB.20250733

摘要

本文针对深空探测等极端环境下太空任务对电子器件的需求，研究了亚20 nm体硅FinFET工艺下温度传感器的低温总剂量（Total Ionizing Dose，TID）效应.该温度传感器核心电路为基于PNP双极晶体管构成的带隙基准电路.理论分析表明，290 K与110 K辐照下双极晶体管退化均表现为基极复合电流增大，但其主导机制存在本质差异：常温下界面陷阱密度增加主导复合过程，符合氢离子漂移致Si-H键断裂的经典模型；而在极低温环境下，氢离子的漂移运动被“冻结”，边界陷阱隧穿辅助复合机制成为退化的主要原因.由于110 K时边界陷阱浓度远大于290 K时界面陷阱浓度，导致明显的低温辐照损伤增强效应.电路分析与仿真验证表明，随着辐射诱导泄漏电流从0 nA增加至100 nA，带隙基准电压显著变化，导致输出温度码增加约21 bit，这从电路层面预言了辐照会导致温度码正向漂移.为验证理论分析，基于定制的低温总剂量效应测试系统，分别在110 K和290 K温度条件下，利用Co

γ射线源对测试芯片进行了累积1 Mrad（Si）总剂量辐照试验.实验结果表明，1 Mrad（Si）辐照后，110 K低温辐照下传感器的温度码累积增加值分别达到37 bit和30 bit，显著高于290 K室温辐照下的9 bit，明确验证了低温辐照损伤增强效应.本研究为极低温辐射环境下FinFET集成电路（特别是依赖双极器件的传感器）的设计与加固提供

了重要的理论依据和实验参考.

Abstract

This paper investigates the cryogenic total ionizing dose (TID) effects on a temperature sensor fabricated in a sub-20 nm bulk silicon FinFET technology

targeting applications in extreme environments such as deep-space exploration. The sensor core utilizes a bandgap reference circuit based on PNP bipolar junction transistors. Theoretical analysis reveals that the degradation of bipolar transistors under irradiation at 290 K or 110 K manifests an increase in the base recombination current. However

the underlying dominant mechanisms are fundamentally different. At room temperature (290 K)

the degradation is primarily governed by an increase in the interface trap density

consistent with the classical model involving hydrogen ion (H⁺) drift leading to the breaking of Si-H bonds. In contrast

under cryogenic conditions (110 K)

the drift motion of H⁺ ions is effectively “frozen”

and the tunneling-assisted recombination mechanism via border traps becomes the main contributor to degradation. Given that the border trap concentration at 110 K is significantly higher than the interface trap concentration at 290 K

a pronounced enhancement of radiation damage at cryogenic temperatures is observed. Circuit analysis and simulation validation demonstrate that as the radiation-induced leakage current increases from 0 nA to 100 nA

the bandgap reference voltage undergoes significant changes

resulting in an approximate 21 bit increase in the output temperature code. This finding theoretically predicts a positive drift in the temperature code due to irradiation. To experimentally verify the theoretical analysis

irradiation tests were conducted using a customized cryogenic TID effect test system and a Co⁶⁰ γ-ray source

accumulating a total dose of 1 Mrad(Si) under 110 K and 290 K conditionsrespectively. The experimental results unequivocally show that after 1 Mrad(Si) irradiation

the cumulative increases in the temperature code for sensors irradiated at 110 K reach 37 bits and 30 bits

respectively

which are substantially greater than the 9 bit increase observed under 290 K room-temperature irradiation. This clear quantitative evidence firmly validates the existence of cryogenic temperature radiation damage enhancement effects. This study provides crucial theoretical insights and experimental data for the design and radiation hardening of FinFET integrated circuits

particularly sensors relying on bipolar devices

operating in extreme low-temperature and high-radiation environments.

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references

HISAMOTO D , LEE W C , KEDZIERSKI J , et al . FinFET-a self-aligned double-gate MOSFET scalable to 20 nm [J ] . IEEE Transactions on Electron Devices , 2000 , 47 ( 12 ): 2320 - 2325 .

YUAN Q F , GUO W , JIN L , et al . Experimental investigation on the influence of high temperature on total ionizing dose effect in bulk FinFETs [J ] . IEEE Transactions on Nuclear Science , 2025 , 72 ( 8 ): 2311 - 2316 .

CHATTERJEE I , ZHANG E X , BHUVA B L , et al . Geometry dependence of total-dose effects in bulk FinFETs [J ] . IEEE Transactions on Nuclear Science , 2014 , 61 ( 6 ): 2951 - 2958 .

GONG Y F , CHEN X T , ZHAO Q , et al . A comprehensive investigation of total ionizing dose effects on bulk FinFETs through TCAD simulation [J ] . Microelectronics Reliability , 2024 , 163 : 115534 .

WEI X W , CUI J W , LUO D , et al . Enhanced total ionizing dose response of 16 nm n-FinFETs with a single fin [J ] . IEEE Electron Device Letters , 2023 , 44 ( 12 ): 1931 - 1934 .

ÁLVAREZ M , JIMÉNEZ J J , GONZÁLEZ-GUERRERO M , et al . Total ionizing dose radiation test on the temperature sensor TMP36 from analog devices [C ] // 2012 IEEE Radiation Effects Data Workshop . Piscataway : IEEE , 2012 : 1 - 7 .

CAO Y , DE COCK W , STEYAERT M , et al . A 4.5 MGy TID-tolerant CMOS bandgap reference circuit using a dynamic base leakage compensation technique [J ] . IEEE Transactions on Nuclear Science , 2013 , 60 ( 4 ): 2819 - 2824 .

RIZZO M , MUSCHITIELLO M , GUPTA V , et al . A characterization method for TID versus temperature effects on microelectronic circuits [J ] . IEEE Transactions on Nuclear Science , 2024 , 71 ( 8 ): 1932 - 1939 .

CHEVAS L , NIKOLAOU A , BUCHER M , et al . Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS [C ] // 2018 25th International Conference . Piscataway : IEEE , 2018 : 313 - 318 .

FELITSYN V , PODLEPETSKY B , BAKERENKOV A , et al . Temperature influence on the TID effects in RadFETs [C ] // 2017 IEEE 30th International Conference on Microelectronics . Piscataway : IEEE , 2017 : 167 - 169 .

BORISOV A Y , KESSARINSKIY L N , VANZHA M M , et al . Analog ASIC TID behavior in a temperature range [C ] // 2017 IEEE 30th International Conference on Microelectronics . Piscataway : IEEE , 2017 : 109 - 112 .

GAILLARDIN M , MARTINEZ M , GIRARD S , et al . High total ionizing dose and temperature effects on micro- and nano-electronic devices [C ] // 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications . Piscataway : IEEE , 2013 : 6728068 .

刘帘曦 , 仵少飞 , 王格夫 , 等 . 应用于高精度ADC的低失调低噪声高精度基准电压源 [J ] . 电子学报 , 2025 , 53 ( 6 ): 1865 - 1873 .

LIU L X , WU S F , WANG G F , et al . Low-voltage, low-noise, high-precision bandgap reference for high-resolution ADC [J ] . Acta Electronica Sinica , 2025 , 53 ( 6 ): 1865 - 1873 . (in Chinese)

HUGHES R C . Hole mobility and transport in thin SiO 2 films [J ] . Applied Physics Letters , 1975 , 26 ( 8 ): 436 - 438 .

SAKS N S , KLEIN R B , GRISCOM D L . Formation of interface traps in MOSFETs during annealing following low temperature irradiation [J ] . IEEE Transactions on Nuclear Science , 1988 , 35 ( 6 ): 1234 - 1240 .

FLEETWOOD D M , SHANEYFELT M R , WARREN W L , et al . Border traps: Issues for MOS radiation response and long-term reliability [J ] . Microelectronics Reliability , 1995 , 5 ( 3 ): 403 - 428 .

JANG D , BURY E , RITZENTHALER R , et al . Self-heating on bulk FinFET from 14nm down to 7nm node [C ] // 2015 IEEE International Electron Devices Meeting . Piscataway : IEEE , 2016 : 1161 - 1164 .

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