功率半导体器件电荷场调制机理

章文通; 张波; 李肇基

doi:10.12263/DZXB.20250921

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功率半导体器件电荷场调制机理

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- 功率半导体器件电荷场调制机理
- Charge Field Modulation Mechanism of Power Semiconductor Devices
- 电子学报 2025年53卷第12期页码：4859-4866
- 作者机构：
  
  电子科技大学，四川成都 611731
- 作者简介：
  
  [ "章文通男，1988年1月出生于云南省曲靖市.现为电子科技大学教授，博士生导师.主要研究方向为功率半导体器件与功率集成技术.获国家科技进步奖二等奖、工业和信息化部技术发明二等奖、中国产学研合作创新成果二等奖、中国电子学会优秀博士论文奖.E-mail: zhwt@uestc.edu.cn" ]
  [ "张波男，1964年5月出生于重庆市.现为电子科技大学教授，博士生导师，电子科技大学集成电路研究中心主任、功率集成技术实验室主任.主要研究方向为功率半导体技术.获国家及省部级科技奖励18项，其中作为第一完成人两次荣获国家科技进步奖二等奖.中国电子学会会员编号：E190021100S.E-mail: zhangbo@uestc.edu.cn" ]
  [ "李肇基男，1940年9月出生于四川省内江市.现为电子科技大学教授，博士生导师，享受国务院政府特殊津贴专家.曾任校微电子所所长、省电力电子学会副理事长.主要研究方向为功率半导体器件与集成电路.获国家科技进步奖二等奖一次、三等奖一次.E-mail: zjli@uestc.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62274022)
- DOI：10.12263/DZXB.20250921
  中图分类号： TN43
- 收稿：2025-11-24，
  
  录用：2025-12-09，
  
  纸质出版：2025-12-25
- 稿件说明：
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章文通, 张波, 李肇基. 功率半导体器件电荷场调制机理[J]. 电子学报, 2025, 53(12): 4859-4866.

ZHANG Wen-tong, ZHANG Bo, LI Zhao-ji. Charge Field Modulation Mechanism of Power Semiconductor Devices[J]. Acta Electronica Sinica, 2025, 53(12): 4859-4866.
章文通, 张波, 李肇基. 功率半导体器件电荷场调制机理[J]. 电子学报, 2025, 53(12): 4859-4866. DOI：10.12263/DZXB.20250921

ZHANG Wen-tong, ZHANG Bo, LI Zhao-ji. Charge Field Modulation Mechanism of Power Semiconductor Devices[J]. Acta Electronica Sinica, 2025, 53(12): 4859-4866. DOI：10.12263/DZXB.20250921

摘要

功率半导体器件与微纳器件的本质区别在于前者具有承受高压的耐压层和终端区.本文将功率半导体器件电场分解为电离电荷产生的电荷场

和外加电势产生的电势场

，使得各类功率半导体器件的电场作用机理，均可通过其变化电荷产生的附加电荷场进行独立分析.据此，本文提出功率半导体器件电荷场调制机理，通过电荷场

对电势场

的多维调制，实现器件耐压层与终端区的电势和电场的全域优化.电荷场调制机理普适于硅基分立、集成功率半导体器件耐压层及其终端设计，并可推广应用于宽禁带功率半导体器件.未来，该机理还可进一步与人工智能技术融合，提升器件设计效率.

Abstract

The essential disparity between power semiconductor devices and micro/nano-devices lies in the former possessing a voltage-withstanding layer and a termination region. In this study

the electric field within power semiconductor device is dissected into two components: the charge field

originated from ionized charges

and the potential field

induced by the applied potential. This decomposition allows the independent analysis of the electric field interaction mechanisms in various devices to be made by examining the additional charge fields generated by varying charges. Based on this analysis

a charge field modulation mechanism for power semiconductor devices is introduced. This mecha

nism achieves holistic optimization of the electric potential and field distribution across the voltage-withstanding layer and the termination region through multi-dimensional modulation of the potential field

by the charge field

. The proposed charge field modulation mechanism is universally adaptable to the design of voltage-withstanding layers and their corresponding terminations in both discrete and integrated power semiconductor devices. Moreover

its applicability extends to wide-bandgap power semiconductor devices. In the future

this mechanism can be further integrated with artificial intelligence technology to enhance the efficiency of device design.

关键词

Keywords

references

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