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金刚石表面损伤层及其对外延金刚石性能的影响研究
| 更新时间：2026-05-15
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金刚石表面损伤层及其对外延金刚石性能的影响研究
Study on the Surface Damage Layer of Diamond and Its Influence on the Performance of Epitaxial Diamond
- 电子学报 2026年 页码：1-7
- 作者机构：
1.中国电子科技集团公司第十三研究所，河北石家庄 050051
2.固态微波器件与电路全国重点实验室，河北石家庄 050051
- 作者简介：
[ "程奕赫 男，2001年3月出生于山西省运城市，硕士研究生，研究方向为半导体材料。 E-mail: 798462190@qq.com" ]
[ "马孟宇 男，1996年5月出生于辽宁省锦州市，工程师，主要研究方向为超宽禁带半导体材料。 E-mail: cetcmamy@163.com" ]
[ "刘庆彬 男，1985年7月出生于黑龙江省七台河市，高级工程师，主要研究方向为超宽禁带半导体材料。E-mail: liuqingbin163@163.com" ]
[ "何泽召 男，1986年3月出生于河北省石家庄市，高级工程师，主要研究方向为超宽禁带半导体器件与材料。E-mail: hezz@cetc.cn" ]
[ "蔚翠 女，1983年出生于河北省衡水市，研究员，长期从事半导体技术研究工作，涉及宽禁带半导体、量子传感器件等。 E-mail: yuc@cetc.cn" ]
[ "冯志红 男，1973年出生于吉林省四平市，研究员，长期从事半导体技术研究工作，涉及宽禁带半导体、固态太赫兹、碳电子等。 E-mail: fengzh@cetc.cn" ]
- 基金信息：
DOI：10.12263/DZXB.20260325
中图分类号： TN304;收稿：2026-03-25，
录用：2026-04-08，
网络首发：2026-05-15，
- 稿件说明：
移动端阅览
程奕赫, 马孟宇, 刘庆彬, 等. 金刚石表面损伤层及其对外延金刚石性能的影响研究[J/OL]. 电子学报, 2026,1-7.
CHENG Yihe, MA Mengyu, LIU Qingbin, et al. Study on the Surface Damage Layer of Diamond and Its Influence on the Performance of Epitaxial Diamond[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-7.
程奕赫, 马孟宇, 刘庆彬, 等. 金刚石表面损伤层及其对外延金刚石性能的影响研究[J/OL]. 电子学报, 2026,1-7. DOI： 10.12263/DZXB.20260325.
CHENG Yihe, MA Mengyu, LIU Qingbin, et al. Study on the Surface Damage Layer of Diamond and Its Influence on the Performance of Epitaxial Diamond[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-7. DOI： 10.12263/DZXB.20260325.
金刚石表面损伤层及其对外延金刚石性能的影响研究
摘要
氢终端金刚石诱导的二维空穴气是金刚石实现半导体化的重要途径。机械抛光作为金刚石衬底制备的关键工艺，会不可避免引入亚表面损伤层，导致表面晶格畸变、缺陷密度升高，并在氢等离子体处理时的选择性刻蚀中，引发表面形貌恶化、粗糙度上升，显著抑制二维空穴气输运特性，制约氢终端金刚石电性能与器件应用。本文以（001）取向的化学气相沉积单晶金刚石衬底为研究对象，通过调控电感耦合等离子体（Inductively Coupled Plasma， ICP）刻蚀时间实现亚表面损伤层的去除，系统研究ICP刻蚀时间对金刚石表面形貌、损伤层结构及氢终端电性能的影响。研究结果表明：随着ICP刻蚀时间的增加，氢处理后的样品表面刻蚀坑与划痕逐渐消失，形貌恶化得到有效抑制；透射电子显微镜显示，精抛光后金刚石存在约80 nm的亚表面损伤层，经15 min的ICP刻蚀后可基本去除，仅残留约1.5 nm的表面重构层；且随着损伤层的逐步去除，氢终端金刚石载流子浓度由
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降至
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，迁移率由
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提升至
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。进一步对损伤层去除后的样品进行单晶同质外延，获得了低缺陷、高纯金刚石外延层，并且迁移率进一步提升至
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。本研究明确了ICP刻蚀去除亚表面损伤层对氢终端金刚石电性能的调控规律，为优化氢终端金刚石表面质量与电特性提供理论与实验参考。
Abstract
Hydrogen-terminated diamond-induced two-dimensional hole gas is an important pathway for achieving semiconductor behavior in diamond. Mechanical polishing
as a key process in the preparation of diamond substrates
inevitably introduces a subsurface damage layer
leading to surface lattice distortion and increased defect density. During selective etching in hydrogen plasma treatment
it causes deterioration of surface morphology and an increase in
roughness
significantly suppressing the transport properties of the two-dimensional hole gas and limiting the electrical performance and device applications of hydrogen-terminated diamond. This study focuses on (001)-oriented chemical vapor deposition single-crystal diamond substrates. By controlling the inductively coupled plasma(ICP) etching time
the subsurface damage layer can be removed
and the effects of ICP etching time on diamond surface morphology
damage layer structure
and hydrogen-terminated electrical properties were systematically investigated. The results show that with increased ICP etching time
the etching pits and scratches on the hydrogen-treated sample surfaces gradually disappear
and surface deterioration is effectively suppressed. Transmission electron microscopy reveals that polished diamond has a subsurface damage layer of about 80 nm
which can be almost completely removed after 15 minutes of ICP etching
leaving only a surface reconstruction layer of approximately 1.5 nm. Moreover
as the damage layer is gradually removed
the carrier concentration of hydrogen-terminated diamond decreases from
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to
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while mobility increases from
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. Further homoepitaxial growth on the damage layer-removed samples produced a low-defect
high-purity diamond epitaxial layer
with mobility further increased to
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. This study clarifies the regulation of hydrogen-terminated diamond electrical performance through ICP etching removal of the subsurface damage layer and provides theoretical and experimental references for optimizing the surface quality and electrical
characteristics of hydrogen-terminated diamond.
关键词
Keywords
references
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