GaAs photocathode with avalanche electron multiplier is a new type photocathode and fabricated by adding the avalanche electron multiplication layer in typical GaAs photocathode

the hot clean temperature、electron gain and other performance of the photocathode component are investigated.The I-V characteristic of the photocathode component after and before hot cleaning was measured and analyzed.The experimental results were shown that photocathode component can endure 580℃ hot cleaning temperature and got electron gain 12.6

the radiation sensitivity is greater or equal to 3.87mA/w at 880nm of wave length

the dark current density is less than or equal to 6.7910

-5

mA/cm

2

.