GaN high electron mobility transistors (HEMTs) are difficult to model because of their complex device characteristics. Although EEHEMT and Angelov models have been successfully applied to large-signal models of GaAs HEMT/MESFETs

but they are no longer accurate and complete when used in GaN HEMT modeling. In this paper

a compact model topology is proposed for GaN HEMTs which is based on the DC I-V

non-linear capacitance

parasitic elements

gate/drain lag and current collapse

thermal effects and noise characteristics of GaN HEMT devices. It is proved that this model topology has good convergence in simulation. It is suitable for the establishment of large-signal models of GaN HEMTs

and satisfies the demand for device model of the GaN-based microwave-wave circuit design.