To reduce the on-resistance and enhance the breakdown voltage of silicon on insulator (SOI)

a Dual-Trench-Gate silicon on insulator device with a L-shaped gate field plate is proposed by using the field plate (FP) technology.On the basis of the dual-trench structure

a second gate is formed in the oxidation trench

and the L-shaped gate field plate is formed in the extension of the second gate.The drift region length is folded

the breakdown voltage is increased.The dual gates form dual conduction channels

which widen the vertical conduction area and reduced the specific on-resistance.The L-shaped gate field plate modulates the electric field in the drift region

increases the optimized doping concentration of the drift region significantly and further reduces the specific on-resistance.The simulator results show that under the condition of the highest FOM

as compared with a conventional SOI device at the same cell pitch

the breakdown voltage is increased by 123%

and the specific on-resistance is reduced by 32%.The specific on-resistance is reduced by 87.5% at the same breakdown voltage.Compared with a dual-trench SOI device with the same cell pitch

the proposed device not only maintains the high breakdown voltage as the dual-trench SOI device

but also reduces the specific on-resistance by 46%.