Time domain sputtering effect is the phenomenon that the time domain scattering waveform is large and unstable at the beginning when the scatterings from different parts of the scatterer are overlapped in the far field.For low RCS targets

the amplitudes of the total scattering decreases only after the scatterings from different parts are overlapped and stabilized.And there is a relatively strong total scattering in the beginning.In this paper

the time domain sputtering characteristics of slot arrays with different sizes are studied and simulated by finite-difference time domain algorithm.The equivalent circuit parameters are extracted by the equivalent circuit method.The effects of parallel capacitances caused by widths of the slots on sine wave time-domain sputtering and Gaussian pulse time-domain characteristics are analyzed by the equivalent circuit method.The results show that when the parallel capacitance decrease

the decrease rate of the envelope value of the time domain reflection coefficient increase

which leads to the decrease of the maximum value of the sputtering effect.The theoretical results have been verified by experiments.