The failure models of SiC JFET and SiC MOSFET have been developed.Based on the conventional circuit models of SiC JFET and SiC MOSFET

the additional leakage currents between the electrodes are introduced.For SiC JFET

the leakage current between the drain and the source is considered.For SiC MOSFET

two leakage currents are considered

one is the current between the drain and the source

another is the additional leakage current of the gate.Furthermore

the mobility dependent on the temperature and the electric-field strength replaces the constant mobility in conventional circuit models.The results from other experimental works and TCAD simulations verify the failure models of SiC JFET and SiC MOSFET.The developed failure models can be used to compare the short-circuit performances of SiC JFET and SiC MOSFET.