The asymmetrical double-material-gate s-Si (strained Silicon) HALO doping channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure is proposed. The front gate and back gate are composed of two metals with different work functions. It has the higher doping concentration in the HALO doping channel end near the drain. The two-dimensional Poisson's equation is solved by applying the parabolic potential approximation and the suitable boundary condition. The analytical models of surface potential、 surface electric field and threshold voltage for the double-material-gate device are constructed by solving which of the front gate and back gate. Results show that the proposed novel device is expected to suppress the short channel effect、hot carrier effect and drain induced barrier lowering. The derived analytical models accord with the DESSIS simulation results very well.