The nondestructive and high-resolution near-field distribution imaging of microwave and millimeter wave chips is very important for the function and failure analysis of RF chips. This experiment is based on the unique quantum system of diamond NV (nitrogen-vacancy) color center. A diamond sample with a diameter of about 14 μm is selected and adhered to the tapered tip of a 20 μm fiber. A high-resolution

non-destructive and miniaturized probe is prepared by analyzing the ground state spin evolution law of NV color center in the change of microwave field

and the all optical method is used. The whole field distribution on the chip surface is obtained by imaging. In this paper

the near-field distribution image of GaN high electron mobility transistor is given. The ODMR spectrum and Rabi spectrum are fitted

and the imaging results are analyzed. This system has the advantages of high efficiency

high resolution

high sensitivity and low near-field interference. It is expected to provide a new scheme for the application of high integration microwave circuit fault diagnosis

antenna radiation profile

microwave integrated circuit electromagnetic compatibility test

etc.