In order to meet the needs of integrated microwave devices for high-resolution microwave near-field measurement

this paper proposes a microwave near-field imaging technology based on the diamond Nitrogen-Vacancy (NV) color center. This technology can be used to find interference sources and signal crosstalk of integrated microwave devices such as chips. This microwave near-field imaging method uses diamond NV color center particles as a field sensor

where the diamond particles are fixed at the end of a tapered fiber. Due to the Zeeman effect

the optical detection magnetic resonance (ODMR) spectrum of the NV color center will split into 8 peaks in the external static magnetic field environment. By measuring the Rabi oscillation spectrum of the resonance peak frequency point

the Rabi frequency can be obtained

and then use 2.8MHz/Gauss to calculate the microwave field strength. Finally

the near-field image of the surface microwave field of the chip and the integrated microwave device can be obtained by performing two-dimensional image processing on all measured data points.