1. 新疆大学物理科学与技术学院,新疆,乌鲁木齐,830046
2. 中国科学院新疆理化技术研究所, 中国科学院特殊环境功能材料与器件重点实验室,新疆,乌鲁木齐,830011
3. 新疆电子信息材料与器件重点实验室,新疆,乌鲁木齐,830011
4. 中国科学院大学,北京,100039
5. 新疆大学物理科学与技术学院,新疆,乌鲁木齐,830046
6. 中国科学院新疆理化技术研究所 中国科学院特殊环境功能材料与器件重点实验室,新疆,乌鲁木齐,830011
7. 新疆电子信息材料与器件重点实验室,新疆,乌鲁木齐,830011
8. 中国科学院大学,北京,100039
网络出版:2020-11-25,
纸质出版:2020
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王涛, 王倩, 何承发, 等. 平衡材料对双极器件电离总剂量效应的影响[J]. 电子学报, 2020,48(11):2278-2283.
WANG Tao, WANG Qian, HE Cheng-fa, et al. The Impact of Equilibrium Material on the Total Ionization Dose Effect of Bipolar Devices[J]. Acta Electronica Sinica, 2020, 48(11): 2278-2283.
王涛, 王倩, 何承发, 等. 平衡材料对双极器件电离总剂量效应的影响[J]. 电子学报, 2020,48(11):2278-2283. DOI: 10.3969/j.issn.0372-2112.2020.11.026.
WANG Tao, WANG Qian, HE Cheng-fa, et al. The Impact of Equilibrium Material on the Total Ionization Dose Effect of Bipolar Devices[J]. Acta Electronica Sinica, 2020, 48(11): 2278-2283. DOI: 10.3969/j.issn.0372-2112.2020.11.026.
本文选择贴片式NPN双极器件作为研究对象,采用在器件辐照试验时设置平衡材料的方法,通过对器件辐照敏感电参数的测量,研究平衡材料对双极器件电离总剂量效应的影响程度.结果表明:在器件辐照试验时设置平衡材料,器件的敏感电参数电流增益较未设置平衡材料退化更明显,仅设置前平衡材料比仅设置后平衡材料影响更大.在器件前后均设置平衡材料、仅设置前平衡材料和仅设置后平衡材料三种不同条件下,器件电流增益退化差异在50krad(Si)剂量点时分别为22.55%、13.38%和12.58,当辐照总剂量达到300krad(Si)时降低至11.65%、7.31%和4.14%.因此在评估器件的抗辐照性能过程中,很有必要在器件进行辐照试验时根据器件的结构尺寸,设置一定厚度的平衡材料,使器件敏感区满足次级电子平衡条件,从而保证器件敏感区实际吸收剂量达到标称辐照剂量.
NPN bipolar device with surface mount package was selected as the research object in this paper. By setting the equilibrium material and measuring the radiation sensitive electrical parameters of the device during the radiation experiment
the impact of equilibrium material on the total ionization dose effect of bipolar device was studied. The results show that the current gain degradation of bipolar devices with equilibrium material was more obvious than that without equilibrium material
and only setting the front equilibrium material has a greater impact than only setting the back equilibrium material. In the three different equilibrium materials conditions (front and back
front only
and back only)
the devices current gain degradation differences were 22.55%
13.38%
and 12.58 at the 50 krad (Si) dose point and decreased to 11.65%
7.31%
and 4.14% when the total irradiation dose reached 300 krad (Si) respectively. Therefore
in the process of evaluating the radiation hardness level of electronic device
it is necessary to conduct irradiation tests in the device according to the device's structural size
set a certain thickness of the equilibrium material
so that the device sensitive area to meet the secondary electron equilibrium conditions
so as to ensure that the device sensitive area of the actual absorbed dose to reach the nominal irradiation dose.
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