Abstract：Similarities and differences of irradiation effects between floating gate ROMs (Read Only Memory) and SRAM (Static Random Access Memory) are compared.Reasons for differences are analyzed.The 14MeV neutron fluence threshold when error occurs in floating gate ROMs is higher than that in SRAM by 5 orders of magnitude,31.9MeV proton fluence threshold by 4 orders,and total dose threshold is about 104 rad(Si) for both memories.All of these are attributed to the structure of memory cells and mechanism of radiation effects.Floating gate ROMs are preferable to SRAM in application in space radiation environment when data in memory are not required to erase and write frequently.
贺朝会;耿 斌;杨海亮;陈晓华;李国政;王燕萍. 浮栅ROM与SRAM的辐射效应比较分析[J]. 电子学报, 2003, 31(8): 1260-1262.
HE Chao-hui;GENG Bin;YANG Hai-liang;CHEN Xiao-hua;LI Guo-zheng;WANG Yan-ping. Comparison and Analysis of Radiation Effects between Floating Gate ROMs and SRAMs. Chinese Journal of Electronics, 2003, 31(8): 1260-1262.
2003, Vol. 31 
