退火温度对基于Bi1.5Zn1.05Nb1.5O7栅绝缘层的ZnO-TFTs性能的影响

doi:10.12263/DZXB.20210031

电子学报 ›› 2022, Vol. 50 ›› Issue (2): 455-460.DOI: 10.12263/DZXB.20210031

退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响

张琦¹, 叶伟¹, 孙芳莉², 萧生¹, 杜鹏飞¹

^1.陕西理工大学机械工程学院，陕西汉中 723001
^2.西北工业集团有限公司，陕西西安 710043

收稿日期:2020-12-28 修回日期:2021-06-19 出版日期:2022-02-25
- 通讯作者:
- 叶伟
- 作者简介:
- 张　琦　女，1983年1月生于陕西省汉中市.硕士.现为陕西理工大学机械工程学院讲师.主要研究方向为铁电材料.E-mail: 46604414@qq.com
  叶　伟（通讯作者）　男，1977年5月生于重庆市.博士.现为陕西理工大学机械工程学院副教授，硕士生导师.主要研究方向为电子器件、储能器件、功能材料及换能器技术研究.E-mail: yewei518@163.com
  孙芳莉　女，1975年3月生于陕西省乾县.本科.现为西北工业集团有限公司工程师.主要研究方向为功能材料. E-mail: 522162978@qq.com
  萧　生　男，1994年12月生于重庆市.现为陕西理工大学硕士研究生.主要研究方向为半导体光电子器件.E-mail: xiaosheng1220@qq.com
  杜鹏飞　男，1996年7月生于甘肃庄浪.现为陕西理工大学硕士研究生.主要研究方向为储能材料与器件.E-mail: 2411349154@qq.com
- 基金资助:
- 陕西省教育厅专项科学研究计划 (17JK0144); 陕西理工大学人才启动项目 (SLGQD2017-19)

Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator

ZHANG Qi¹, YE Wei¹, SUN Fang-li², XIAO Sheng¹, DU Peng-fei¹

^1.School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
^2.North Industries Group Pinance Company, Ltd., Xi’an, Shaanxi 710043, China

Received:2020-12-28 Revised:2021-06-19 Online:2022-02-25 Published:2022-02-25
- Corresponding author:
- YE Wei
- Supported by:
- Special Science Research Project of Education Department of Shaanxi Province (17JK0144); Startup Program for Introduced Talents of Shaanxi University of Technology (SLGQD2017-19)

摘要/Abstract

摘要：

具有高介电常数的Bi_1.5Zn_1.05Nb_1.5O₇薄膜存在氧空位和陷阱缺陷，因此，使用Bi_1.5Zn_1.05Nb_1.5O₇作为栅绝缘层的ZnO-TFTs具有高的界面费米能级钉扎效应和低的电学性能.为了解决这些问题，提高器件性能，本文采用射频磁控溅射制备了以Bi_1.5Zn_1.05Nb_1.5O₇为栅绝缘层的ZnO-TFTs，同时，详细研究了300℃、400℃、500℃和600℃等退火温度对ZnO-TFTs性能的影响，研究结果表明，随着退火温度的升高，Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层和ZnO-TFTs的性能先升高后降低，在退火温度为500℃时，Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层和ZnO-TFTs的性能都得到了显著提高，电容密度从165nF/cm²升高到222nF/cm²，开关比从10³升高到10⁵.

关键词: Bi_1.5Zn_1.05Nb_1.5O₇薄膜, 氧化锌薄膜晶体管, 射频磁控溅射, 退火温度, 电容密度, 高介电常数

Abstract:

Bi_1.5Zn_1.05Nb_1.5O₇ thin films with high dielectric constant have oxygen vacancy and trap defects. Therefore, ZnO-TFTs using Bi_1.5Zn_1.05Nb_1.5O₇ as gate insulator have high interface Fermi level pinning effect and low electrical properties. To solve these problems and improve device performance, ZnO-TFTs with Bi_1.5Zn_1.05Nb_1.5O₇ as gate insulator were prepared by RF magnetron sputtering. Meanwhile, the effect of the annealing temperature from 300℃ to 600℃ at an interval of 100℃ on the performance of ZnO-TFTs was studied. The research results showed that with the increase of annealing temperature, the properties of Bi_1.5Zn_1.05Nb_1.5O₇ gate insulator and ZnO-TFTs increased at first and then decreased. The performance of Bi_1.5Zn_1.05Nb_1.5O₇ gate insulator and ZnO-TFTs was significantly improved at annealing temperature of 500℃. The capacitance density and I_on/I_off increased from 165nF/cm² to 222nF/cm² and from 10³ to 10⁵, respectively.

Key words: Bi_1.5Zn_1.05Nb_1.5O₇ thin films, ZnO-TFTs, RF magnetron sputtering, annealing temperature, capacitance density, high dielectric constant

中图分类号:

TN321.5

张琦, 叶伟, 孙芳莉, 等. 退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响[J]. 电子学报, 2022, 50(2): 455-460.

Qi ZHANG, Wei YE, Fang-li SUN, et al. Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator[J]. Acta Electronica Sinica, 2022, 50(2): 455-460.

图/表 7

图1 ZnO-TFTs和栅绝缘层特性测试结构图(a) ZnO-TFTs测试结构 (b) 栅绝缘层的特性测试结构图

图2 BZN-5薄膜的SEM测试图(a) 退火300oC　　　　　　　　(b) 退火400oC　　　　　　　　　　(c) 退火500oC　　　　　　　　　(d) 退火600oC

图3 BZN-5薄膜的XRD测试图和I-E特性测试图

图4 BZN-5薄膜的介电和C-E特性图

图5 ZnO-TFTs的输出特性(a) 退火300oC (b) 退火400oC (c) 退火500oC (d) 退火600oC

图6 ZnO-TFTs的转移特性

图7 ZnO-TFTs的性能与退火温度的关系(a) 亚阈值摆幅和界面态密度 (b) 迁移率和开关比 (c) 饱和电流和阈值电压

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退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响

Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator

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