电子学报 ›› 2022, Vol. 50 ›› Issue (5): 1227-1233.DOI: 10.12263/DZXB.20210737

• 学术论文 • 上一篇    下一篇

基于表面势的增强型p-GaN HEMT器件模型

葛晨1, 李胜2, 张弛2, 刘斯扬2, 孙伟锋1,2   

  1. 1.东南大学微电子学院,江苏 无锡 214000
    2.东南大学电子科学与工程学院,江苏 南京 210096
  • 收稿日期:2021-06-10 修回日期:2021-10-22 出版日期:2022-05-25 发布日期:2022-06-18
  • 通讯作者: 刘斯扬
  • 作者简介:葛 晨 女,1997年5月出生于江苏宿迁.现为东南大学微电子学院研究生.研究方向为功率半导体器件可靠性.E‑mail: 220194942@seu.edu.cn
    李 胜 男,1993年4月出生于湖北随州.2016年获得郑州大学电子科学与技术专业学士学位.现为东南大学国家ASIC系统工程研究中心微电子学与固态电子学博士.主要研究方向为GaN功率器件的可靠性和建模.E‑mail: seulisheng@seu.edu.cn
    张 弛 男,1995年9月出生于江苏扬州.2017年获得合肥工业大学电子科学与技术学士学位.现为东南大学国家ASIC系统工程研究中心微电子与固态电子学博士.主要研究方向为GaN功率器件设计与可靠性.E‑mail: galazhang@seu.edu.cn
    刘斯扬 男,1987年5月出生于安徽合肥.现为东南大学电子科学与工程学院教授、博士生导师.主要研究方向为新型功率器件设计、功率集成电路设计和功率器件建模.E⁃mail: liusy2017@seu.edu.cn
    孙伟锋 男,1977年5月出生于江苏武进.现为东南大学电子科学与工程学院教授、博士生导师.主要研究方向为新型功率器件设计、功率集成电路设计、功率器件建模和射频器件设计.E‑mail: swffrog@seu.edu.cn
  • 基金资助:
    国家重点研发计划(2020YFF0218501);江苏省科技成果转化基金(BA2020027);东南大学至善学者(2238185478)

Surface Potential Based E-mode p-GaN HEMT Device Model

GE Chen1, LI Sheng2, ZHANG Chi2, LIU Si-yang2, SUN Wei-feng1,2   

  1. 1.School of Microelectronic,Southeast University,Wuxi,Jiangsu 214000,China
    2.School of Electronic Engineering,Southeast University,Nanjing,Jiangsu 210096,China
  • Received:2021-06-10 Revised:2021-10-22 Online:2022-05-25 Published:2022-06-18
  • Contact: LIU Si-yang

摘要:

为了满足功率电路及系统设计对p-GaN HEMT(High Electron Mobility Transistor)器件模型的需求,本文建立了一套基于表面势计算方法的增强型p-GaN HEMT器件SPICE(Simulation Program with Integrated Circuit Emphasis)模型.根据耗尽型GaN HEMT器件和增强型p-GaN HEMT器件结构的对比,推导出p-GaN栅结构电压解析公式.考虑到p-GaN栅掺杂效应和物理机理,推导出栅电容和栅电流解析公式.同时,与基于表面势的高电子迁移率晶体管高级SPICE模型内核相结合,建立完整的增强型p-GaN HEMT功率器件的SPICE模型.将所建立的SPICE模型与实测结果进行对比验证.结果表明,所建立的模型准确实现了包括转移特性、输出特性、栅电容以及栅电流在内的p-GaN HEMT器件的电学特性.模型仿真数据与实测数据拟合度误差均小于5%.本文所提出的增强型p-GaN HEMT器件模型在进行电路设计时具有重要的应用价值.

关键词: 增强型, 高级Simulation Program with Integrated Circuit Emphasis模型, p-GaN栅, 转移特性, 输出特性, 栅电容, 栅电流

Abstract:

To meet the requirements for the power circuit and system design for enhancement-mode p-GaN HEMT(High Electron Mobility Transistor) device SPICE(Simulation Program with Integrated Circuit Emphasis) models, a model of enhancement-mode p-GaN HEMT device based on the surface potential calculation method is proposed in the paper. According to the comparison between the structures of the depletion-mode GaN HEMT device and the enhancement-mode p-GaN HEMT device, analytical formulas for the voltage of the p-GaN gate structure are derived. Considering the doping effect of p-GaN gate and physical mechanism, analytical formulas for the gate current and gate capacitance are derived. At the same time, combined with the ASM(Advanced SPICE Model) core, a complete SPICE model of enhancement-mode p-GaN HEMT power device is established. The established SPICE model is compared and verified with the measured results. The results show that the proposed model accurately realizes the electrical characteristics of p-GaN HEMT device including transfer characteristics, output characteristics, gate capacitance, and gate current. The simulation data of the model fits the measured data of the actual enhancement-mode p-GaN HEMT device well, and the fitting errors of the model simulation data and the measured data are less than 5%. The enhancement-mode p-GaN HEMT device model proposed in the paper, which is based on the perfect ASM-HEMT and considers the doping effect of p-GaN layer and physical mechanism of p-GaN gate structure, has important application value in circuit design.

Key words: enhancement-mode, advanced simulation program with integrated circuit emphasis model, p-GaN gate, transfer characteristics, output characteristics, gate capacitance, gate current

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