一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路

doi:10.12263/DZXB.20210827

电子学报 ›› 2022, Vol. 50 ›› Issue (11): 2561-2567.DOI: 10.12263/DZXB.20210827

• 学术论文 • 下一篇

一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路

赵鹏, 姜梅

深圳大学电子与信息工程学院, 广东深圳 518061

收稿日期:2021-07-01 修回日期:2021-09-27 出版日期:2022-11-25
- 作者简介:
- 赵鹏男，1994年出生，广东省佛山市人.2018年在大连海事大学获得电子信息科学与技术学士学位，目前正在深圳大学集成电路工程专业攻读硕士学位，目前研究方向为氮化镓功率器件的驱动设计.E-mail: zhaopeng321542@163.com
  姜梅女，1976年出生，四川省阆中市人.分别于2000年、2003年在华中科技大学获得微电子学与固体电子学学士、硕士学位，2012年在北京大学获得微电子学与固体电子学博士学位，同年进入深圳大学任教.目前的研究领域为高性能、低功耗模拟集成电路设计.E-mail: mjiang@szu.edu.cn
- 基金资助:
- 广东省重点科技产业质量基础共性技术研究及应用 (2020B0404030004)

A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge

ZHAO Peng, JIANG Mei

College of Electronics and Information Engineering, Shenzhen University, Shenzhen, Guangdong 518061, China

Received:2021-07-01 Revised:2021-09-27 Online:2022-11-25 Published:2022-11-19

摘要/Abstract

摘要：

为了提高氮化镓半桥结构的抗dv/dt特性，提出了一种适用于氮化镓半桥结构的高可靠性差分电流补偿新颖电平移位电路.该电路在自举电容作用下，将0V~5V输入电压转换为35V~40V输出电压，并且在浮点电压快速变化过程中，输出的驱动电压均保持稳定.电路采用电流镜结构传输信号，能够实现电平信号的快速传递,有效地减小传输延迟.对于浮点电压的快速变化导致移位电平器输出变化的问题，采用新颖的差分电流结构进行电流补偿,提高电路的抗dv/dt特性，获得高可靠性的输出电压.本电路基于标准0.35μm BCD工艺40 V的LDMOS耐压器件，对该电平移位电路在1MHz频率下进行验证.结果表明上升沿响应延迟为587.184ps，下降沿响应延迟为832.144ps，抗正的dv/dt变化为116V/ns以及对负dv/dt变化不敏感，该电路具有高速,高可靠性优点.

关键词: 氮化镓, 电平移位, 电流补偿, 半桥结构, 自举电容, 降压式变换电路

Abstract:

In order to improve the power supply slew tolerance of the GaN half-bridge structure, a high-reliability differential current compensation level shift circuit suitable for GaN half-bridge structure is proposed. With the help of bootstrap capacitor, this circuit converts the input voltage of 0V to 5V into the output voltage of 35V to 40V and the output driving voltage remains stable during the rapid change of floating-point voltage. The circuit adopts a current mirror structure to transmit signals, which can realize the rapid transmission of level signals and effectively reduce the transmission delay. Since the rapid changing of the power supply voltage causes the output of the level shifter to change, in order to solve this issue, we propose a differential current structure, which is used for current compensation to improve the power supply slew tolerance and stabilize the output result based on the standard 0.35μm BCD (Bipolar-CMOS-DMOS) process and 40V LDMOS (Laterally Diffused Metal-Oxide Semiconductor) high voltage devices, the level shift circuit is verified at 1MHz frequency. The results show that the rising edge response delay and the falling edge response delay are 587.184ps and 832.144ps, respectively, a 116V/ns positive power-rail slew tolerance and infinite negative slew tolerance. This circuit has the advantages of high speed and high reliability.

Key words: GaN, level shifter, current compensation, half bridge structure, bootstrap capacitor, buck

中图分类号:

TN432

赵鹏, 姜梅. 一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路[J]. 电子学报, 2022, 50(11): 2561-2567.

ZHAO Peng, JIANG Mei. A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge[J]. Acta Electronica Sinica, 2022, 50(11): 2561-2567.

图/表 15

图1 高压半桥系统

图2 电源dv/dt变化

图3 基于电流镜的电平移位电路

图4 基于恒定电流补偿的电平移位器

图5 基于差分电流补偿的电平移位电路

图6 负dv/dt对电路影响

图7 正dv/dt对电路影响

图8 电流补偿原理图

图9 差分电流补偿移位电平器电路瞬态仿真

图10 电平移位器dv/dt瞬态仿真

图11 带差分电流补偿模块移位电平器

图12 工艺角仿真

图13 Vout2点电压对比

图14 差分电流补偿移位电平器输出延迟

表1 本文与其他文献中电平移位电路的参数对比

文献	工艺	电压（V）	延迟（ns）	抗dv/dt（V/ns）
文献［5］	0.5 μmHVCMOS	40	2	40
文献［6］	0.18 μmHVCMOS	20	0.37	30
文献［9］	0.5 μm UHV	700	20	120
文献［10］	0.18 μmBiCMOS	50	5	20
本文	0.35 μmHVCMOS	40	0.709	116

参考文献 10

1	余旭明, 洪伟, 等. Ku波段宽带氮化镓功率放大器 MMIC[J]. 电子学报, 2015, 43(9): 1859‑1863.
	YU Xu-ming, HONG Wei, et al. Ku band power amplifier MMIC based on GaN HEMT technology[J]. Acta Electronica Sinica, 2015, 43(9): 1859‑1863. (in Chinese)
2	BANDYOPADHYAY S, NEIDORFF B, et al. 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor[C]//2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers Digest of Technical Papers. San Francisco: IEEE, 2013: 368‑369.
3	ZHANG Yun‑wu, ZHU Jing, et al. A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC[C]//2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). Hong Kong: IEEE, 2015: 173‑176.
4	AKAHANE M, JONISHI A, et al. A new level up shifter for HVICs with high noise tolerance[C]// 2014 International Power Electronics Conference. Hiroshima: IEEE, 2014: 2302‑2309.
5	LIU Zhi-dong, LIN Cong, et al. Design of on-chip gate drivers with power-efficient high-speed level shifting and dynamic timing control for high-voltage synchronous switching power converters[J]. IEEE Journal of Solid-State Circuits, 2015, 50(6): 1463‑1477.
6	HOLLIS J S, MCNEILL N, et al. Design of 370-ps delay floating-voltage level shifters with 30 V/ns power supply slew tolerance[J]. IEEE Transactions on Circuits and Systems II, 2016, 63(7): 688‑692.
7	STARK H B, HOLLIS J S, et al. A new design technique for sub-nanosecond delay and 200 V/ns power supply slew-tolerant floating voltage level shifters for GaN SMPS[J]. IEEE Transactions on Circuits and Systems I, 2019,66(3): 1280‑1290.
8	ZHU Jing, YU Si-yuan, et al. Study and implementation of 600-v high-voltage gate driver IC with the common-mode dual-interlock technique for GaN devices[J]. IEEE Transactions on Industrial Electronics, 2021, 68(2): 1506‑1514.
9	CHEN J L, CHIU C C, et al. 120 V/ns output slew rate enhancement technique and high voltage clamping circuit in high integrated gate driver for power GaN FETs[C]//ESSCIRC Conference 2015—41st European Solid-State Circuits Conference. Graz: IEEE, 2015: 291‑294.
10	WITTMANN J, ROSAHL T, et al. A 50 V high-speed level shifter with high dv/dt immunity for multi-MHz DCDC converters[C]//ESSCIRC 2014—40th European Solid State Circuits Conference. Venice Lido: IEEE, 2014: 151‑154.

[1]	蔡玮, 邢远, 施政, 袁佳磊, 贾志宏, 王永进. 基于聚焦离子束技术的可见光光子调控[J]. 电子学报, 2019, 47(1): 252-256.
[2]	韩克锋, 蒋浩, 秦桂霞, 孔月婵. 一种紧凑的GaN高电子迁移率晶体管大信号模型拓扑[J]. 电子学报, 2018, 46(2): 501-506.
[3]	余旭明, 洪伟, 王维波, 张斌. Ku波段宽带氮化镓功率放大器MMIC[J]. 电子学报, 2015, 43(9): 1859-1863.
[4]	郭宝增;孙荣霞;UMBERTO Ravaioli. 用二维全带组合Monte Carlo方法模拟纤锌矿相GaN静电感应晶体管(SIT)特性[J]. 电子学报, 2003, 31(8): 1211-1214.

一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路

A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge

RichHTML

PDF

可视化

摘要/Abstract

引用本文

使用本文

图/表 15

参考文献 10

相关文章 4

编辑推荐

Metrics