电子学报

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绝缘体上硅功率半导体单芯片集成技术

张龙1, 刘斯扬1, 孙伟锋1, 马杰1, 盘成务1, 何乃龙2, 张森2, 苏巍2   

  1. 1.东南大学国家ASIC工程研究中心,江苏 南京 210096
    2.华润上华科技有限公司,江苏 无锡 214061
  • 收稿日期:2022-05-05 修回日期:2022-11-07 出版日期:2022-11-26
    • 通讯作者:
    • 孙伟锋
    • 作者简介:
    • 张龙 男,1986年出生,江苏徐州人.2010年于中国矿业大学获学士学位,2013年于东南大学获硕士学位,2018年于东南大学获博士学位,2018至2020年于东南大学从事博士后工作,2020年至今为东南大学教师,副高级职称,博士生导师.主要研究方向为功率半导体集成工艺及器件.E-mail: longzh@seu.edu.cn
      刘斯扬 男,1987年出生,安徽合肥人.2008年于合肥工业大学获学士学位,2011年于东南大学获硕士学位,2015年于东南大学获博士学位,2015至2017年于东南大学从事博士后工作,目前为东南大学青年首席教授,国家高层次人才,博士生导师.主要研究方向为功率半导体集成工艺及器件.E-mail: liusy2017@seu.edu.cn
      孙伟锋(通讯作者) 男,1977年出生,江苏武进人.2000年、2003年、2007年于东南大学分别获得学士、硕士及博士学位,目前为东南大学首席教授,国家高层次人才,江苏特聘教授,博士生导师.主要研究方向为功率集成电路. Email: swffrog@seu.edu.cn
    • 基金资助:
    • 国家自然科学基金 (62274032); 江苏省科技成果项目 (BA2022005)

Study on the Silicon-on-Insulator Power Semiconductor Monolithic Integration Technology

ZHANG Long1, LIU Si-yang1, SUN Wei-feng1, MA Jie1, PAN Cheng-wu1, HE Nai-long2, ZHANG Sen2, SU Wei2   

  1. 1.National ASIC System Engineering Research Center,Southeast University,Nanjing,Jiangsu 210096,China
    2.CSMC Technologies Co. ,Wuxi,Jiangsu 214061,China
  • Received:2022-05-05 Revised:2022-11-07 Online:2022-11-26
    • Corresponding author:
    • SUN Wei-feng

摘要:

利用单芯片集成技术制造的智能功率芯片具有体积小、寄生小、损耗低等方面的优势,其技术难度远高于传统的多芯片、单封装形式的智能功率模块.本文首先介绍了单片智能功率芯片的架构与技术需求.然后,探讨了绝缘体上硅功率半导体单芯片集成的工艺流程和器件类型.接着,总结了高压横向IGBT器件技术、续流二极管器件技术、LDMOS器件技术的特征和效果.此外,还讨论了单片智能功率芯片的相关可靠性问题,包括高压互连线效应和低温雪崩不稳定.本课题组在功率半导体集成型器件的电流能力、关断速度、短路承受能力、反向恢复峰值电流、安全工作区、高压互连线屏蔽、低温可靠性等关键特性优化或可靠性提升方面进行了自主创新,构建了基于绝缘体上硅的功率半导体单芯片集成技术,并成功研制了单片智能功率芯片.

关键词: 功率半导体, 绝缘体上硅, 单片集成, 功率集成电路, 功率器件

Abstract:

The intelligent power chip designed and manufactured based on the single-chip integration technology has the advantages of small size, small parasitic element and low loss. Its technical difficulty is much higher than the intelligent power module with multiple co-packaged chips. Firstly, this paper introduces the block diagram of the single-chip intelligent power chip and its technical requirements. Then, the process flow and device types of the silicon-on-insulator(SOI) power semiconductor single-chip integration technology are discussed. Then, the features and technical effect of the high-voltage lateral IGBT, freewheeling diode and LDMOS technologies are summarized. Additionally, the reliability of single-chip intelligent power chip is discussed, including high-voltage interconnection effect and low-temperature instability. The research group of this paper has made independent innovation in the optimization or reliability improvement of key characteristics of integrated power semiconductor devices, such as current capability, turn-off speed, short-circuit withstand capability, reverse recovery peak current, safe operation area, high-voltage interconnection shielding, low-temperature reliability and so on. We developed the power semiconductor single-chip integration technology based on SOI, and realized the localization of single-chip intelligent power chip.

Key words: power semiconductor, silicon-on-insulator, single-chip integration, power integrated circuit, power device

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