基于GaN HEMT的1.5～3.5GHz宽带平衡功率放大器设计

doi:10.3969/j.issn.0372-2112.2013.04.032

电子学报 ›› 2013, Vol. 41 ›› Issue (4): 815-820.DOI: 10.3969/j.issn.0372-2112.2013.04.032

基于GaN HEMT的1.5～3.5GHz宽带平衡功率放大器设计

冷永清¹, 张立军², 曾云¹, 鲁辉², 郑占旗², 张国梁¹, 彭伟¹, 彭亚涛², 官劲²

1. 湖南大学物理与微电子科学学院,湖南长沙 410082;
2. 中国科学院微电子研究所,北京 100029

收稿日期:2011-11-19 修回日期:2012-09-28 出版日期:2013-04-25
- 通讯作者:
- 曾云 男.1956年出生,湖南人.教授、博士生导师.主要从事电子器件与集成电路及其应用方面的教学和研究工作.现任湖南大学物理与微电子科学学院院长兼党委书记,中国电子学会高级会员,BES国际合作研究组成员. E-mail:yunzeng@hnu.edu.cn
- 作者简介:
- 冷永清 男.1981年12月出生,河南项城人.2004年和2009年分别在湖南大学化学化工学院和物理与微电子科学学院获理学学士、工学硕士学位.现为湖南大学在读博士生,从事宽带微波功率放大器研究. E-mail:yq-leng@126.com 张立军 男.1963年出生.研究员,博士生导师.主要从事微波高功率及固态功率技术、微电子技术、微波高频段与毫米波段准光与空间功率合成等开发和测试研究.现任中国科学院微电子研究所电子系统总体技术研究室副主任,中国电子学会高级会员,IEEE会员,总装微波功率电子器件评审专家. E-mail:zhanglijun@ime.ac.cn
- 基金资助:
- 国家973重点基础研究发展计划 (No.2010CB327506); 国家自然科学基金 (No.61040061); 湖南省自然科学基金 (No.11JJ2034)

Design of a 1.5～3.5GHz Octave Bandwidth Balanced Power Amplifier in GaN HEMT Technology

LENG Yong-qing¹, ZHANG Li-jun², ZENG Yun¹, LU Hui², ZHENG Zhan-qi², ZHANG Guo-liang¹, PENG Wei¹, PENG Ya-tao², GUAN Jin²

1. College of Physics and Microelectronics, Hunan University, Changsha, Hunan 410082, China;
2. Institute of Microelectronics, The Chinese Academy of Science, Beijing 100029, China

Received:2011-11-19 Revised:2012-09-28 Online:2013-04-25 Published:2013-04-25

摘要/Abstract

摘要： 阐述了基于GaN HEMT的宽带平衡功率放大器的设计与实现方法:采用Lange耦合器构建平衡功率放大器结构,采用多节阻抗匹配技术设计输入/输出匹配网络,实现功放宽带特性(1.5～3.5GHz);采用与Si热膨胀系数接近的AlSiC散热载片,克服管芯与载片热稳定系数不同引起的热稳定问题,并采用脉冲工作模式进一步减小功放发热量.制作实际功放模块用于测试,在1.5～3.5GHz频带内,功放线性增益大于12dB,增益平坦度为±0.4dB,饱和输出功率大于8W,漏极效率为56%～65%.实验测试结果与设计仿真结果有较好一致性,验证了设计方法的正确性.

关键词: 宽带功率放大器, GaN HEMT, 平衡功率放大器

Abstract: In this paper,the design and implementation of a broadband balanced power amplifier(PA)using a GaN HEMT transistor is presented.Two Lange couplers are used for a balanced PA configuration,and two multi-section matching networks are used in both input and output ports to improve the bandwidth of PA.The carrier sheet is made of AlSiC whose thermal expansion coefficient is close to silicon's,and the power amplifier operates in a pulse mode in order to reduce the heat dissipated on it.By biasing the amplifier at V_DS=28V,I_DS=110mA,the measurement results show 12～13dB linear gain and 56%～65% drain efficiency in the 1.5～3.5GHz frequency range.Moreover,an output power higher than 8W is maintained over the band.

Key words: wideband power amplifier, GaN HEMT, balanced power amplifier

中图分类号:

TN911.23

冷永清, 张立军, 曾云, 鲁辉, 郑占旗, 张国梁, 彭伟, 彭亚涛, 官劲. 基于GaN HEMT的1.5～3.5GHz宽带平衡功率放大器设计[J]. 电子学报, 2013, 41(4): 815-820.

LENG Yong-qing, ZHANG Li-jun, ZENG Yun, LU Hui, ZHENG Zhan-qi, ZHANG Guo-liang, PENG Wei, PENG Ya-tao, GUAN Jin. Design of a 1.5～3.5GHz Octave Bandwidth Balanced Power Amplifier in GaN HEMT Technology[J]. Acta Electronica Sinica, 2013, 41(4): 815-820.

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基于GaN HEMT的1.5～3.5GHz宽带平衡功率放大器设计

Design of a 1.5～3.5GHz Octave Bandwidth Balanced Power Amplifier in GaN HEMT Technology

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