基于巴特沃斯低通滤波器的毫米波宽带低插损限幅器研究

doi:10.3969/j.issn.0372-2112.2013.09.022

电子学报 ›› 2013, Vol. 41 ›› Issue (9): 1809-1814.DOI: 10.3969/j.issn.0372-2112.2013.09.022

基于巴特沃斯低通滤波器的毫米波宽带低插损限幅器研究

姚常飞^1,2, 周明², 罗运生², 吴刚², 许从海²

1. 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室, 江苏南京 210016;
2. 南京电子器件研究所微波毫米波模块电路事业部, 江苏南京 210016

收稿日期:2012-10-11 修回日期:2013-03-14 出版日期:2013-09-25
- 作者简介:
- 姚常飞 男,1982年出生于江苏省常州市,博士,工程师,现就职于南京电子器件研究所,在国内外期刊发表科研论文近二十余篇.研究方向毫米波亚毫米波电路与系统. E-mail:yaocf1982@163.com;周明 男,1974年出生于江苏省南京市,高级工程师,现就职于南京电子器件研究所,研究方向微波毫米波电路与系统. E-mail:zright@sina.com;罗运生 男,1944年出生于辽宁省沈阳市,研究员,现就职于南京电子器件研究所,研究方向微波毫米波电路与系统;吴刚 男,1965年出生于江苏省南京市,工程师,现就职于南京电子器件研究所,研究方向微波毫米波频率源;许从海 男,1981年出生于江苏省淮安市,工程师,现就职于南京电子器件研究所,研究方向微波毫米波多功能组件.

Research on Millimeter Wave Broad-Band and Low Insertion Loss Limiters Based on Butterworth Low Pass Filter

YAO Chang-fei^1,2, ZHOU Ming², LUO Yun-sheng², WU Gang², XU Cong-hai²

1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, Jiangsu 210016, China;
2. Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing, Jiangsu 210016, China

Received:2012-10-11 Revised:2013-03-14 Online:2013-09-25 Published:2013-09-25

摘要/Abstract

摘要： 基于巴特沃斯(最大平坦型)低通滤波器模型,研究了毫米波限幅器在小信号时的等效电路.结合限幅电路电磁场仿真模型,分析限幅二极管物理模型的寄生参数和键合金丝电感,提取相应的S参数,以设计限幅器的阻抗匹配网络,研制出了Ka波段全频段低插损限幅器.在26~40GHz,测得限幅器小信号插损小于4.3dB,最小插损2.2dB,驻波比小于1.95:1;当输入的连续波功率为0.5W时,限幅输出功率小于10.5dBm;整个限幅器尺寸为20×12×6mm³,限幅器性能达到国外同类产品水平.

关键词: 毫米波, 等效电路模型, 巴特沃斯低通滤波器, 限幅器

Abstract: Equivalent circuit of a millimeter wave limiter is analyzed based on Butterworth (maximally flatness) low pass filter model.Considering the parasitic components of the limiter diodes,the whole limiter physical structure is setup.Diode parasitic parameters,bonding wire inductances,and complete limiter circuit matching networks are analyzed with EM software.A Ka full-band low insertion loss limiter is realized,the measured small-signal insertion loss is lower than 4.3dB in 26~40GHz,the lowest insertion loss is 2.2dB,and the VSWR is better than 1.95:1.At large signal condition with input continuous wave power of 0.5W,the peak leakage power is lower than 10.5dBm.The dimension of the limiter is 20?12?6mm³, and its performance achieves the level of similar foreign products.

Key words: millimeter wave, equivalent circuit model, butterworth low pass filter, limiter

中图分类号:

TN61

姚常飞, 周明, 罗运生, 等. 基于巴特沃斯低通滤波器的毫米波宽带低插损限幅器研究[J]. 电子学报, 2013, 41(9): 1809-1814.

YAO Chang-fei, ZHOU Ming, LUO Yun-sheng, et al. Research on Millimeter Wave Broad-Band and Low Insertion Loss Limiters Based on Butterworth Low Pass Filter[J]. Acta Electronica Sinica, 2013, 41(9): 1809-1814.

参考文献

[1] GOLDIE H.A 2-kW average power X-band receiver protector [J].IEEE Transactions on Electron Devices,1977,24(1):53-55.
[2] GOLDIE H,PATEL S.An RF-primed all-halogen gas plasma microwave high power receiver protector [A].IEEE MTT-S International Microwave Symposium Digest [C].Dallas:IEEE,1982.69-71.
[3] GOLDIE H.A high power broadband millimeter-wave switch and receiver protector [A].IEEE MTT-S International Microwave Symposium Digest [C].Ottawa:IEEE,1987.354-356.
[4] UEBELE G S.Characteristics of ferrite microwave limiters [J].IEEE Transactions on Microwave Theory and Techniques,1959,7(1):18-23.
[5] CARLISLE T P.X-band high-power multipactor receiver protector [J].IEEE Transactions on Microwave Theory and Techniques,1978,26(5):345-347.
[6] STITZER S N,CARTER P S,GOLDIE H.A high power X-band frequency selective passive YIG limiter [A].IEEE MTT-S International Microwave Symposium Digest [C].San Diego:IEEE,1977.528-531.
[7] SARKAR B K.Cutoff frequency of microwave coaxial multimode limiter [J].IEEE Transactions on Electron Devices,1982,29(3):463-464.
[8] SEYMOUR D J,HESTON D D,LEHMANN R E.Monolithic MBE GaAs PIN diode limiter [J].IEEE Microwave and Millimeter-Wave Monolithic Circuits,1987,87(1):35-37.
[9] KATOK V B,KAMANKO A A,SOLOVYOV D A.The self-controlled MM-band limiter of power [A].9th International Microwave and Telecommunication Technology Conference [C].Crimean:IEEE,1999.85-86.
[10] DEVLIN L M,DEARN A W,BEASLEY P D L.A monolithic,dual channel,0.5 to 20GHz limiter [A].Proceedings of the European Microwave Conference [C].Paris:IEEE,2000.172-175.
[11] SMITH D G,HSTON D D,HEIMER H J,et al.Designing reliable high-power limiter circuits with GaAs PIN diodes [C].IEEE MTT-S International Microwave Symposium Digest [C].Seattle:IEEE,2002.1245-1247.
[12] BAHL I J.10W CW broadband balanced limiter LNA fabricated using MSAG MESFET process [J].International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering,2003,13(2):118-127.
[13] ARMSTRONG A L,ANANAD Y.A limiter for high-power millimeter-wave system [J].IEEE Transactions on Microwave Theory Techniques,1983,83(2):238-241.
[14] SILLARD G,HENRY E R.Active high power limiter a MM wavelengths [A].15th European Microwave Conference [C]Paris:IEEE,1985.593-598.
[15] KIRILLOV A V,SMIMOV V A,ROMANOV L P.Broadband semiconductor protection devices for 8-mm waveband [A].15th International Microwave and Telecommunication Technology Conference [C].Crimean:IEEE,2005.183-184.
[16] GUDKOVA N B,SHNITNIKOV A S.Millimeter-wave waveguide diode limiter [A].16th International Microwave and Telecommunication Technology Conference [C].Crimean:IEEE,2006.123-124.
[17] YANG S S,KIM T Y,KONG D K,et al.A novel analysis of a Ku-band planar PIN diode limiter [J].IEEE Transactions on Microwave Theory and Techniques,2009,57(6):1447-1460.
[18] 钟玮,丁玉霞.1-8GHz超宽带限幅器 [J].固体电子学研究与进展,1998,18(3):340. ZHONG Wei,DING Yu-xia.1-18GHz super-broadband limiter [J].Research & Progress of SSE,1998,18(3):340.(in Chinese)
[19] 顾晓春.X波段小型化无源限幅器的研究 [J].现代雷达,2005,27(8):59-61. GU Xiao-chun.Research on X-band passive limiter with small size [J].Modern Radar,2005,27(8):59-61.(in Chinese)
[20] 陈新宇,蒋幼泉,等.砷化镓PIN管单片限幅器 [J].固体电子学研究与进展,2006,26(4):573. CHEN Xin-yu,JIANG You-quan,et al.GaAs PIN limiter MMIC [J].Research & Progress of SSE,2006,26(4):573.(in Chinese)
[21] 金杰,冯军,等.0.18μm CMOS 10Gb/s光接收机限幅放大器 [J].电子学报,2004,32(8):1393-1395. JIN Jie,FENG Jun,et al.0.18μm CMOS limiting amplifier for 10Gb/s optical receiver [J].Acta Electronica Sinica,2004,32 (8):1393-1395.(in Chinese)
[22] SUTOMO A,CAFARO N G,LASKAR J,et al.Experimental modeling repeatability investigation and optimization of mic-rowave bond wire interconnects [J].IEEE Transactions on Advanced Packing,2001,24(4):595-603.

基于巴特沃斯低通滤波器的毫米波宽带低插损限幅器研究

Research on Millimeter Wave Broad-Band and Low Insertion Loss Limiters Based on Butterworth Low Pass Filter

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

[1]	张继龙, 李业振, 刘勇, 王栋. 基于透镜成像原理的微波阵列快速成像技术[J]. 电子学报, 2022, 50(5): 1107-1116.
[2]	连继伟, 班永灵, 顾鹏飞, 丁大志. 基于共腔罗特曼透镜的毫米波十字扫描多波束阵列天线[J]. 电子学报, 2022, 50(12): 2996-3002.
[3]	廖希, 黄晨曦, 王洋, 车延庭. 室内毫米波3D-MIMO无线信道参数提取与多径簇特性研究[J]. 电子学报, 2022, 50(11): 2698-2706.
[4]	廖勇, 杨馨怡, 杜洁汝. 基于两阶段的毫米波大规模MIMO低复杂度混合预编码算法[J]. 电子学报, 2021, 49(7): 1298-1304.
[5]	丁青锋, 罗静, 高鑫鹏, 石辉. 基于混合量化移相器的毫米波大规模MIMO预编码设计[J]. 电子学报, 2021, 49(12): 2349-2356.
[6]	张文茹, 汪莞乔, 官科, 艾渤, 曾毅, 赖峥嵘. 城市交通环境下23GHz信道仿真建模[J]. 电子学报, 2021, 49(10): 2069-2080.
[7]	潘攀, 字张雄, 蔡军, 唐烨, 刘世硕, 谢青梅, 边兴旺, 冯进军. 用于高速无线通信的毫米波行波管[J]. 电子学报, 2020, 48(9): 1834-1840.
[8]	于洋, 王子野, 乔灵博, 赵自然. 基于贝塞尔波束的大景深毫米波介质透镜天线设计[J]. 电子学报, 2020, 48(7): 1369-1374.
[9]	陈兵兵, 曹欣远, 陈明生, 齐琦, 况晓静, 吴先良, 陈辉. 基于欠定方程的频谱峰值搜索算法及其在连续毫米波雷达系统中的应用[J]. 电子学报, 2020, 48(2): 369-374.
[10]	宋凯旋, 高锦春, 王紫任, 谢刚, 李晓明, 石国超. 射频连接器与微带线组件焊接过渡段阻抗补偿研究[J]. 电子学报, 2019, 47(11): 2241-2247.
[11]	孙海洋, 陈珍, 杨冠男, 高波. 基于采样精度切换的毫米波无线通信空闲侦听机制研究[J]. 电子学报, 2018, 46(9): 2115-2122.
[12]	杜瑞, 樊养余, 王剑书. 水基附着介质罩对毫米波衰减的理论分析与实验研究[J]. 电子学报, 2017, 45(9): 2143-2148.
[13]	冯子奇, 牛勇, 苏厉, 金德鹏. 基于混合波束赋形的室内毫米波MIMO系统性能分析[J]. 电子学报, 2017, 45(6): 1281-1287.
[14]	毛煜茹, 刘莹, 谢拥军, 程志华, 王新波, 李韵. 金属接触非线性引起的无源互调效应的数值分析[J]. 电子学报, 2015, 43(6): 1174-1178.
[15]	余振兴, 冯军. 一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析[J]. 电子学报, 2015, 43(2): 405-411.