电子学报 ›› 2015, Vol. 43 ›› Issue (9): 1859-1863.DOI: 10.3969/j.issn.0372-2112.2015.09.026

• 科研通信 • 上一篇    下一篇

Ku波段宽带氮化镓功率放大器MMIC

余旭明1,2, 洪伟1, 王维波2, 张斌2   

  1. 1. 东南大学毫米波国家重点实验室, 江苏南京 210096;
    2. 单片集成电路与模块国家重点实验室, 江苏南京 210016
  • 收稿日期:2014-04-04 修回日期:2014-08-11 出版日期:2015-09-25
    • 作者简介:
    • 余旭明 男,1982年7月生,浙江建德人.2004年和2006在南京理工大学获得工学学士和硕士学位.现为东南大学在读博士生,从事GaN功率放大器研究.E-mail:nlgyxm9989@163.com

Ku Band Power Amplifier MMIC Based on GaN HEMT Technology

YU Xu-ming1,2, HONG Wei1, WANG Wei-bo2, ZHANG Bin2   

  1. 1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, Jiangsu 210096, China;
    2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, Jiangsu 210016, China
  • Received:2014-04-04 Revised:2014-08-11 Online:2015-09-25 Published:2015-09-25

摘要:

基于0.25μm栅长GaN HEMT工艺,采用三级放大拓扑结构设计了一款Ku波段GaN功率放大器.放大器设计从建立大信号模型出发,输出匹配网络和级间匹配网络均采用电抗匹配减小电路的损耗,从而提高整体放大器的功率效率.测试结果表明,该放大器在14.6~18GHz频带内,小信号增益30dB,脉冲饱和输出功率达15W,功率附加效率(PAE)大于32%;在14.8GHz频点处,放大器的峰值功率达19.5W,PAE达39%.该结果表明GaN MMIC具有高频高功率高效率的优势,具有广阔的应用前景.

关键词: 氮化镓, 功率放大器, 微波集成电路, Ku波段

Abstract:

A three stage Ku band GaN power amplifier MMIC was developed with 0.25 μm GaN HEMT technology.The MMIC was designed in micro-strip technology.Based on the large signal model,the amplifier adopted reactance matching network to reduce the insertion loss of the output stage,which improved its associated efficiency.The measurement results exhibited that this amplifier provided a flat small signal gain of 30dB and a pulsed saturated output power of 15W at the drain voltage of 28V over the 14.6~18GHz frequency range.At 14.8 GHz,a peak output power of 19.5W with power added efficiency of 39% was achieved.

Key words: GaN HEMT, power amplifier, MMIC, Ku-band

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