CMOS反相器低频噪声模型及可靠性表征研究

doi:10.3969/j.issn.0372-2112.2016.11.012

电子学报 ›› 2016, Vol. 44 ›› Issue (11): 2646-2652.DOI: 10.3969/j.issn.0372-2112.2016.11.012

CMOS反相器低频噪声模型及可靠性表征研究

陈晓娟¹, 陈东阳², 吴洁³

1. 长春理工大学电子信息工程学院, 吉林长春 130022;
2. 东北电力大学信息工程学院吉林吉林 132012;
3. 北华大学电气信息工程学院吉林吉林 132013

收稿日期:2015-03-30 修回日期:2015-11-17 出版日期:2016-11-25
- 通讯作者:
- 陈东阳
- 作者简介:
- 陈晓娟,女,1970年出生,吉林长春人,长春理工大学电子信息工程学院教授、博士生导师,主要研究方向为模拟电路故障诊断以及电力线通信.E-mail:cxj_neiep@126.com
- 基金资助:
- 国家自然科学基金 (No.61271115）

Investigation on Low-Frequency Noise Models and Representation for Reliability of CMOS Inverter

CHEN Xiao-juan¹, CHEN Dong-yang², WU Jie³

1. School of Electronic Information Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China;
2. School of Information Engineering, Northeast Dianli University, Jilin, Jilin 132012, China;
3. School of Electrical Information Engineering, Beihua University, Jilin, Jilin 132013, China

Received:2015-03-30 Revised:2015-11-17 Online:2016-11-25 Published:2016-11-25
- Supported by:
- National Natural Science Foundation of China (No.61271115)

摘要/Abstract

摘要：

为了表征CMOS反相器的可靠性，从其负载电流和输出电压的特性入手，详细推导了一种基于载流子波动理论的低频噪声模型，并由实验数据验证了模型的准确性.由实验结果可知，负载电流功率谱密度随频率的增加而减小，遵循1/f噪声的变化规律；得到了负载电流归一化噪声功率谱密度与器件尺寸的关系.通过深入研究1/f 噪声与界面态陷阱密度的关系，验证了1/f噪声可用于表征CMOS反相器的可靠性，证明了噪声幅值越大，器件可靠性越差，失效率显著增大，为评价CMOS反相器的靠性提供了一种可行及有效的方法.

关键词: COMS反相器, 低频噪声, 可靠性, 缺陷

Abstract:

In order to characterize the reliability of CMOS inverter,a kind of low-frequency noise model is deduced in detail by using the characteristics of load current and output voltage,based on the carrier fluctuation theory,and the accuracy of the model was verified by experimental data.The experiment results indicate that load current power spectral follows the changing rule of the 1/f noise,decreasing with the increase of frequency;the normalized noise power spectral density of load current decreases with the increase of the channel width or length.Using the experimental data,the relationship between 1/f noise and interface trap state densityof CMOS inverter is established.Verify that the 1/f noise can be used to characterize the reliability of CMOS inverter.It is proved that the larger interface trap state density,the larger the noise magnitude,leading to the degradation of device reliability and significant rise in device invalidation rate.That provides a feasible and effective method for evaluating the reliability of CMOS inverter.

Key words: CMOS inverter, low-frequency noise, reliability, defect

中图分类号:

TN94

陈晓娟, 陈东阳, 吴洁. CMOS反相器低频噪声模型及可靠性表征研究[J]. 电子学报, 2016, 44(11): 2646-2652.

CHEN Xiao-juan, CHEN Dong-yang, WU Jie . Investigation on Low-Frequency Noise Models and Representation for Reliability of CMOS Inverter[J]. Acta Electronica Sinica, 2016, 44(11): 2646-2652.

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CMOS反相器低频噪声模型及可靠性表征研究

Investigation on Low-Frequency Noise Models and Representation for Reliability of CMOS Inverter

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