电子学报 ›› 2017, Vol. 45 ›› Issue (4): 989-999.DOI: 10.3969/j.issn.0372-2112.2017.04.031

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两类阻变机理及性能改善方法的研究

王玮, 陈晋, 余林峰, 薛群虎, 杨春利   

  1. 西安建筑科技大学材料与矿资学院, 陕西西安 710055
  • 收稿日期:2015-09-18 修回日期:2016-05-10 出版日期:2017-04-25 发布日期:2017-04-25
  • 作者简介:王玮 男,1989年出生,陕西人,硕士研究生.主要从事阻变存储器件及巨介电陶瓷材料方面的研究.E-mail:hmily0719@qq.com;陈晋 男,副教授,1978年生,江苏人.主要从事铁电压电陶瓷材料及厚膜制备,计算机模拟材料制备工艺,金属纳米材料,光电子功能纳米材料等方面的研究工作;余林峰 男,1989年出生,广西玉林人,西安建筑科技大学硕士研究生,主要研究方向为二元氧化物阻变存储器.E-mail:lfby0818@126.com
  • 基金资助:

    国家自然科学基金(No.51372193);教育部基金(No.20126120120016);高等学校博士学科点专项科研基金(No.20126120120018)

A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory

WANG Wei, CHEN Jin, YU Lin-feng, XUE Qun-hu, YANG Chun-li   

  1. College of Material and Mineral Resources, Xi'an University of Architecture and Technology, Xi'an, Shaanxi 710055, China
  • Received:2015-09-18 Revised:2016-05-10 Online:2017-04-25 Published:2017-04-25

摘要:

在新型非易失性存储领域,结构简单、高速低耗的阻变存储器具有巨大优势和很强的竞争力.简要介绍了阻变存储器的结构及其两个电阻转变行为.总结了两类阻变机理,探讨了阻变存储器性能优化的方法,以及优化方法在阻变性能与器件的可靠性和稳定性之间如何取得平衡统一的问题,并展望了其前景.

关键词: 阻变存储器, 阻变机理, 性能优化

Abstract:

In the field of new type of nonvolatile memory,the simple-structured RRAM with high speed and low consumption has manifested great advantages and competitiveness.In this review,a brief introduction to the structures of RRAM and two kinds of resistive switching behaviors are made.And then,a summary of two kinds of resistive mechanisms is also given.With discussing the performance optimization of RRAM,how the optimized methods achieve balance and unification between the resistive performance and the reliability and stability of the devices is simply demonstrated.In the end,the future of RRAM is also prospected.

Key words: RRAM, resistive switching mechanism, performance optimization

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