两类阻变机理及性能改善方法的研究

doi:10.3969/j.issn.0372-2112.2017.04.031

摘要/Abstract

摘要：

在新型非易失性存储领域，结构简单、高速低耗的阻变存储器具有巨大优势和很强的竞争力.简要介绍了阻变存储器的结构及其两个电阻转变行为.总结了两类阻变机理，探讨了阻变存储器性能优化的方法，以及优化方法在阻变性能与器件的可靠性和稳定性之间如何取得平衡统一的问题，并展望了其前景.

关键词: 阻变存储器, 阻变机理, 性能优化

Abstract:

In the field of new type of nonvolatile memory,the simple-structured RRAM with high speed and low consumption has manifested great advantages and competitiveness.In this review,a brief introduction to the structures of RRAM and two kinds of resistive switching behaviors are made.And then,a summary of two kinds of resistive mechanisms is also given.With discussing the performance optimization of RRAM,how the optimized methods achieve balance and unification between the resistive performance and the reliability and stability of the devices is simply demonstrated.In the end,the future of RRAM is also prospected.

Key words: RRAM, resistive switching mechanism, performance optimization

中图分类号:

TP333

王玮, 陈晋, 余林峰, 薛群虎, 杨春利. 两类阻变机理及性能改善方法的研究[J]. 电子学报, 2017, 45(4): 989-999.

WANG Wei, CHEN Jin, YU Lin-feng, XUE Qun-hu, YANG Chun-li. A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory[J]. Acta Electronica Sinica, 2017, 45(4): 989-999.

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