电子学报 ›› 2018, Vol. 46 ›› Issue (2): 501-506.DOI: 10.3969/j.issn.0372-2112.2018.02.033

• 科研通信 • 上一篇    下一篇

一种紧凑的GaN高电子迁移率晶体管大信号模型拓扑

韩克锋, 蒋浩, 秦桂霞, 孔月婵   

  1. 南京电子器件研究所, 江苏南京 210016
  • 收稿日期:2016-12-12 修回日期:2017-07-15 出版日期:2018-02-25
    • 作者简介:
    • 韩克锋,男,1989年12月生,山东潍坊人.2012年毕业于华中科技大学电子科学与技术专业,获学士学位.2015年毕业于南京电子器件研究所获硕士学位.毕业后从事GaAs低噪声器件、工艺和电路,GaN器件、工艺以及器件模型和电路设计工作.E-mail:han.kefeng@163.com
    • 基金资助:
    • 国家自然科学基金 (No.61474101)

A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors

HAN Ke-feng, JIANG Hao, QIN Gui-xia, KONG Yue-chan   

  1. Nanjing Electrical Devices Institute, Nanjing, Jiangsu 210016, China
  • Received:2016-12-12 Revised:2017-07-15 Online:2018-02-25 Published:2018-02-25
    • Supported by:
    • National Natural Science Foundation of China (No.61474101)

摘要: GaN高电子迁移率晶体管(HEMT)以其复杂的器件特性使其大信号建模变得十分困难,尽管EEHEMT、Angelov等模型结构曾经成功应用于GaAs HEMT/MESFET的大信号模型,但当它们被用于GaN HEMT建模时却不再准确和完备.面向GaN HEMT器件的大信号模型,本文提出了一种紧凑的模型拓扑,此模型拓扑综合了GaN HEMT器件的直流电压-电流(I-V)特性、非线性电容、寄生参数、栅延迟漏延迟与电流崩塌、自热效应以及噪声等特性.经验证此模型拓扑在仿真中具有很好的收敛性,适用于GaN HEMT器件的大信号模型的建立,满足GaN基微波电路设计对器件模型的需求.

关键词: 氮化镓高电子迁移率晶体管, 大信号模型, 非线性, 收敛性

Abstract: GaN high electron mobility transistors (HEMTs) are difficult to model because of their complex device characteristics. Although EEHEMT and Angelov models have been successfully applied to large-signal models of GaAs HEMT/MESFETs, but they are no longer accurate and complete when used in GaN HEMT modeling. In this paper, a compact model topology is proposed for GaN HEMTs which is based on the DC I-V, non-linear capacitance, parasitic elements, gate/drain lag and current collapse, thermal effects and noise characteristics of GaN HEMT devices. It is proved that this model topology has good convergence in simulation. It is suitable for the establishment of large-signal models of GaN HEMTs, and satisfies the demand for device model of the GaN-based microwave-wave circuit design.

Key words: GaN high electron mobility transistor, large-signal model, nonlinearity, convergence

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