电子学报 ›› 2018, Vol. 46 ›› Issue (11): 2768-2772.DOI: 10.3969/j.issn.0372-2112.2018.11.026

• 学术论文 • 上一篇    下一篇

对称三材料双栅应变硅MOSFET亚阈值电流与亚阈值斜率解析模型

辛艳辉1, 袁合才2, 辛洋3   

  1. 1. 华北水利水电大学信息工程学院, 河南郑州, 450046;
    2. 华北水利水电大学数学与统计学院, 河南郑州, 450046;
    3. 水利勘查设计研究院, 山东德州, 253014
  • 收稿日期:2017-11-10 修回日期:2018-02-26 出版日期:2018-11-25 发布日期:2018-11-25
  • 作者简介:辛艳辉 女,1976年出生,山东德州人,博士,副教授,现主要从事于半导体器件物理方面的研究.E-mail:xinyanhui@ncwu.edu.cn;袁合才 男,1978年出生,河南开封人,副教授,现主要从事于器件建模方面的研究.E-mail:yuanhecai@ncwu.edu.cn
  • 基金资助:
    河南省科技公关项目(No.172102210367);华北水利水电大学高层次人才科研启动项目(No.40436)

Analytical Models of Subthreshold Current and Subthreshold Slope for Symmetrical Triple-Material Double-Gate s-Si MOSFETs

XIN Yan-hui1, YUAN He-cai2, XIN Yang3   

  1. 1. Department of Information and Engineering, North China University of Water Resources and Electric Power, Zhengzhou, Henan 450046, China;
    2. Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou, Henan 450046, China;
    3. Water Conservancy Survey and Design Institute, Dezhou, Shandong 253014, China
  • Received:2017-11-10 Revised:2018-02-26 Online:2018-11-25 Published:2018-11-25

摘要: 基于泊松方程和边界条件,推导了对称三材料双栅应变硅金属氧化物半导体场效应晶体管(MOSFET:metal oxide semiconductor field effect transistor)的表面势解析解.利用扩散-漂移理论,在亚阈值区电流密度方程的基础上,提出了亚阈值电流与亚阈值斜率二维解析模型.分析了沟道长度、功函数差、弛豫SiGe层的Ge组份、栅介质层的介电常数、应变硅沟道层厚度、栅介质高k层厚度和沟道掺杂浓度等参数对亚阈值性能的影响,并对亚阈值性能改进进行了分析研究.研究结果为优化器件参数提供了有意义的指导.模型解析结果与DESSIS仿真结果吻合较好.

关键词: 亚阈值电流, 亚阈值斜率, 三材料双栅, 应变硅

Abstract: The surface potential analytical solution is derived by Poisson equation and the boundary condition for symmetrical triple-material (TM) double-gate (DG) strained-Si (s-Si) MOSFETs.Two-dimensional analytical models of subthreshold current and subthreshold slope are proposed from subthreshold current density equation based on the diffusion-drift theory.Effects of device parameters on subthreshold characteristics have been discussed and the physical mechanism has been explained.The parameters include channel length,work function difference、Ge mole fraction,permittivity of gate dielectric,strained Si film thickness,high-k layer thickness and channel doping concentration.The improvement of the subthreshold performance has been studied,which provides significant guidance to optimize the device parameters.The analytical models agree well with simulation using DESSIS.

Key words: subthreshold current, subthreshold slope, triple-material double-gate, strained-Si

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