1200V场终止型绝缘栅双极晶体管的ADE物理建模及参数提取

doi:10.3969/j.issn.0372-2112.2019.02.025

电子学报 ›› 2019, Vol. 47 ›› Issue (2): 434-439.DOI: 10.3969/j.issn.0372-2112.2019.02.025

1200V场终止型绝缘栅双极晶体管的ADE物理建模及参数提取

陆戴, 王文杰, 王庆珍, 于平平, 姜岩峰

江南大学物联网工程学院电子工程系, 江苏无锡 214122

收稿日期:2018-07-31 修回日期:2018-09-30 出版日期:2019-02-25
- 通讯作者:
- 姜岩峰
- 作者简介:
- 陆戴男,1994年出生,江苏人.2016级江南大学物联网工程学院硕士研究生,主要研究领域为IGBT建模及参数提取,IGBT驱动电路设计.E-mail:624046908@qq.com;王文杰 男,1993年出生,山西人.2016级江南大学物联网工程学院硕士研究生,主要研究领域为MOSFET近阈值模型的建立及应用.
- 基金资助:
- 国家自然科学基金 (No.61774078）; 江南大学高校自主研究项目 (No.1255210322160220）

ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor

LU Dai, WANG Wen-jie, WANG Qing-zhen, YU Ping-ping, JIANG Yan-feng

School of IOT Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China

Received:2018-07-31 Revised:2018-09-30 Online:2019-02-25 Published:2019-02-25
- Supported by:
- National Natural Science Foundation of China (No.61774078); Independent Research Program of Jiangnan University (No.1255210322160220)

摘要/Abstract

摘要： 绝缘栅双极晶体管（IGBT）是微电子学研究的热点之一，而相关电路仿真迫切需要该器件的等效模型.本文提出基于傅里叶解双极扩散方程（ADE）的1200V场终止型IGBT物理模型，通过RC电路等效漂移区载流子分布，精确求解双极扩散方程.该模型针对大功率IGBT的工作原理，采用大注入假设条件，在综合分析场终止层的同时，根据1200V场终止型IGBT的特点考虑漂移区载流子的复合效应.在提取器件模型所需的关键参数后，用实际IGBT的测量结果对该模型的仿真结果进行了验证，通过分析静态以及关断瞬态特性曲线，仿真与实验数据误差均值小于8%，证明所建模型及参数提取方法的精确度.

关键词: 场终止型绝缘栅双极晶体管, 双极扩散方程, 物理模型

Abstract: Insulated gate bipolar transistor(IGBT)is one of the hot topics in microelectronics research.The related circuit simulation urgentlyneeds the equivalent model of the device.The physical model of the 1200V field-stop IGBT solving ambipolar diffusion equation(ADE)based on the Fourier transformis proposed in this paper.The ADE is solved accurately by the distribution of carriers in equivalent drift region of the RC circuit.The model is based on the working principle of high-power IGBT.The high-level injection hypothesis is used.The complex effect of the 1200V field-stop IGBT is considered according to the characteristics of the 1200V field-stop IGBT.After extracting the key parameters of the model,the simulation results are verified by the actual measurement results.The average error of simulation and experiment is less than 8%.The accuracy of the model and parameter extraction method is proved by analyzing the static and turn-off transient characteristics.

Key words: field stop insulated gate bipolar transistor, ambipolar diffusion equation, physical model

中图分类号:

陆戴, 王文杰, 王庆珍, 等. 1200V场终止型绝缘栅双极晶体管的ADE物理建模及参数提取[J]. 电子学报, 2019, 47(2): 434-439.

LU Dai, WANG Wen-jie, WANG Qing-zhen, et al. ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor[J]. Acta Electronica Sinica, 2019, 47(2): 434-439.

参考文献

[1] Carastro F,et al.High-efficiency high-reliability pulsed power converters for industrial processes[J].IEEE Transactions on Power Electronics,2012,27(1):37-45.
[2] Ranstad P,Nee H P.On dynamic effects influencing IGBT losses in Soft-Switching Converters[J].IEEE Transactions on Power Electronics,2011,26(1):260-271.
[3] 杨洪强,陈星弼.半桥式功率输出级中高速低功耗低侧管的实现[J].电子学报,2001,29(6):814-815. Yang H Q,Chen X B.Realization of a low side device with high speed and low power dissipation in half bridge power output section[J].Acta Electronica Sinica,2001,29(6):814-815.(in Chinese)
[4] Riccio M,et al.Accurate SPICE modeling of Reverse Conducting IGBTs including self-heating effect[J].IEEE Transactions on Power Electronics,2017,32(99):1-1.
[5] 杜明星,魏克新.一种考虑IGBT基区载流子注入条件的物理模型[J].物理学报,2011,60(10):722-727. Du M X.A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region[J].Acta Physica Sinica,2011,60(10):722-727.(in Chinese)
[6] Yuan S C,Zhu C C.IGBT SPICE model with nondestructive parameters extraction and measured verification[J].IEE Proceedings-Electric Power Applications,2003,150(5):575-579.
[7] Hefner A R J.A dynamic electro-thermal model for the IGBT[J].IEEE Transactions on Industry Applications,1994,30(2):394-405.
[8] Igic P M,Mawby P A,Towers M S,et al.New physically-based PiN diode compact model for circuit modelling applications[J].IEE Proceedings-Circuits,Devices and Systems,2002,149(4):257-263.
[9] Jr A R H,Blackburn D L.An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor[J].Solid-State Electronics,1988,31(10):1513-1532.
[10] Hefner A R.Modeling buffer layer IGBTs for circuit simulation[J].Power Electronics IEEE Transactions on,1995,10(2):111-123.
[11] Oh K H,Lee J,Lee K H,et al.A simulation study on novel field stop IGBTs using superjunction[J].IEEE Transactions on Electron Devices,2006,53(4):884-890.
[12] Castellazzi A,Batista E,Ciappa M,et al.Full electro-thermal model of a 6.5kV field-stop IGBT module[A].2008IEEE Power Electronics Specialists Conference[C].Rhodes,Greece:IEEE,2008.392-397.
[13] Tang Y,Wang B,Chen M,et al.Simulation model and parameter extraction of Field-Stop(FS)IGBT[J].Microelectronics Reliability,2012,52(12):2920-2931.
[14] Lauritzen P O,Ma C L.A simple diode model with reverse recovery[J].IEEE Transactions on Power Electronics,1991,6(2):188-191.
[15] Kang X,Caiafa A,Santi E,et al.Characterization and modeling of high-voltage field-stop IGBTs[J].IEEE Transactions on Industry Applications,2003,39(4):922-928.
[16] Wu Z,Su X,Zhu Y.IGBT junction and coolant temperature estimation by thermal model[J].Microelectronics Reliability,2018,87:168-182.
[17] Palmer P R,Santi E,Hudgins J L,et al.Circuit simulator models for the diode and IGBT with full temperature dependent features[J].Power Electronics IEEE Transactions on,2003,18(5):1220-1229.
[18] Bahman A S,Ma K,Blaabjerg F.Alumped thermal model including thermal coupling and thermal boundary conditions for high power IGBT modules[J].IEEE Transactions on Power Electronics,2018,PP(99):1-1.
[19] Kang X,Santi E,Hudgins J L,et al.Parameter extraction for a physics-based circuit simulator IGBT model[A] Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition[C].APEC'03.Miami Beach,FL:IEEE,2003.vol.2.946-952.
[20] Wang L,Xu J,Wang G,et al.Lifetime estimation of IGBT modules for MMC-HVDC application[J].Microelectronics Reliability,2018,82:90-99.
[21] 褚恩辉,金升,张化光.一种新型无源软开关变换器[J].电子学报,2010,38(8):1963-1968. Chu E H,Jin S,Zhang H G.A novel passive soft switching converter[J].Acta Electronica Sinica,2010,38(8):1963-1968.(in Chinese)
[22] Zeng X,Li Z,Gao W,et al.A novel virtual sensing with artificial neural network and K-means clustering for IGBT current measuring[J].IEEE Transactions on Industrial Electronics,2018,65(9):7343-7352.
[23] Tang Y,Ma H.Dynamic electrothermal model of paralleled IGBT modules with unbalanced stray parameters[J].IEEE Transactions on Power Electronics,2017,32(2):1385-1399.

1200V场终止型绝缘栅双极晶体管的ADE物理建模及参数提取

ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor

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