Bi1.5Zn1.0Nb1.5O7栅绝缘层的SiO2修饰对ZnO-TFTs性能的影响

doi:10.3969/j.issn.0372-2112.2019.06.023

电子学报 ›› 2019, Vol. 47 ›› Issue (6): 1344-1351.DOI: 10.3969/j.issn.0372-2112.2019.06.023

Bi_1.5Zn_1.0Nb_1.5O₇栅绝缘层的SiO₂修饰对ZnO-TFTs性能的影响

叶伟, 崔立堃, 常红梅

陕西理工大学机械工程学院, 陕西汉中 723001

收稿日期:2018-12-17 修回日期:2019-01-29 出版日期:2019-06-25
- 通讯作者:
- 叶伟
- 作者简介:
- 崔立堃 男,1976年生于内蒙古武川县,现为陕西理工大学机械工程学院副教授,博士,主要研究方向为电子器件制备与仿真及电子器件性能分析.E-mail:lekuncui@sina.com;常红梅 女,1970年生于陕西耀州人,现为陕西理工大学机械工程学院副教授,硕士,主要研究方向为:集成传感器与执行器、铁电材料与器件.E-mail:chm130002@snut.edu.cn
- 基金资助:
- 陕西省教育厅专项科学研究计划 (No.17JK0144，No.18JK0151）; 陕西省工业自动化重点实验室项目 (No.09JS045）; 陕西理工大学人才启动项目 (No.SLGQD2017-19）

Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs

YE Wei, CUI Li-kun, CHANG Hong-mei

School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China

Received:2018-12-17 Revised:2019-01-29 Online:2019-06-25 Published:2019-06-25
- Supported by:
- Scientific Research Program Funded by Shaanxi Provincial Education Department (No.17JK0144, No.18JK0151); Program of Shaanxi Key Laboratory of Industrial Automation (No.09JS045); Startup Program for Introduced Talents of Shaanxi University of Technology (No.SLGQD2017-19)

摘要/Abstract

摘要： 具有高介电常数的栅绝缘层材料存在某种极化及耦合作用，使得ZnO-TFTs具有高的界面费米能级钉扎效应、大的电容耦合效应和低的载流子迁移率.为了解决这些问题，本文提出了一种使用SiO₂修饰的Bi_1.5Zn_1.0Nb_1.5O₇作为栅绝缘层的ZnO-TFTs结构，分析了SiO₂修饰对栅绝缘层和ZnO-TFTs性能的影响.结果表明，使用SiO₂修饰后，栅绝缘层和ZnO-TFTs的性能得到显著提高，使得ZnO-TFTs在下一代显示领域中具有非常广泛的应用前景.栅绝缘层的漏电流密度从4.5×10^-5A/cm²降低到7.7×10^-7A/cm²，粗糙度从4.52nm降低到3.74nm，ZnO-TFTs的亚阈值摆幅从10V/dec降低到2.81V/dec，界面态密度从8×10¹³cm^-2降低到9×10¹²cm^-2，迁移率从0.001cm²/（V·s）升高到0.159cm²/（V·s）.

关键词: SiO₂薄膜, 氧化锌薄膜晶体管, 修饰层, Bi_1.5Zn_1.0Nb_1.5O₇薄膜, 射频磁控溅射

Abstract: The gate insulator material with high dielectric constant has some polarization and coupling effect,which makes ZnO-TFTs have high interface Fermi level pinning effect,large capacitive coupling effect and low carrier mobility.To solve these problems,in this paper,a kind of ZnO-TFTs structure using SiO₂ modification of Bi_1.5Zn_1.0Nb_1.5O₇ as gate insulator was proposed.The effect of SiO₂ modification on the performance of gate insulator and ZnO-TFTs was systematically investigated.The results showed that the properties of gate insulators and ZnO-TFTs were significantly improved after SiO₂ modification,which makes ZnO-TFTs have a very wide application prospect in the next generation display field.The leakage current density and roughness of gate insulators decreased from 4.5×10^-5A/cm² to 7.7×10^-7A/cm² and from 4.52nm to 3.74nm,respectively.The sub-threshold swing and interface state density of ZnO-TFTs decreased from 10V/dec.to 2.81V/dec.and from 8×10¹³cm^-2 to 9×10¹²cm^-2,respectively.The mobility of ZnO-TFTs increased from 0.001cm²/(V·s) to 0.159cm²/(V·s).

Key words: SiO₂ thin films, ZnO-TFTs, modification layer, Bi_1.5Zn_1.0Nb_1.5O₇ thin films, RF magnetic sputtering

中图分类号:

TN321.5

叶伟, 崔立堃, 常红梅. Bi_1.5Zn_1.0Nb_1.5O₇栅绝缘层的SiO₂修饰对ZnO-TFTs性能的影响[J]. 电子学报, 2019, 47(6): 1344-1351.

YE Wei, CUI Li-kun, CHANG Hong-mei . Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs[J]. Acta Electronica Sinica, 2019, 47(6): 1344-1351.

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Bi_1.5Zn_1.0Nb_1.5O₇栅绝缘层的SiO₂修饰对ZnO-TFTs性能的影响

Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs

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