电子学报 ›› 2019, Vol. 47 ›› Issue (6): 1344-1351.DOI: 10.3969/j.issn.0372-2112.2019.06.023

• 学术论文 • 上一篇    下一篇

Bi1.5Zn1.0Nb1.5O7栅绝缘层的SiO2修饰对ZnO-TFTs性能的影响

叶伟, 崔立堃, 常红梅   

  1. 陕西理工大学机械工程学院, 陕西汉中 723001
  • 收稿日期:2018-12-17 修回日期:2019-01-29 出版日期:2019-06-25 发布日期:2019-06-25
  • 通讯作者: 叶伟
  • 作者简介:崔立堃 男,1976年生于内蒙古武川县,现为陕西理工大学机械工程学院副教授,博士,主要研究方向为电子器件制备与仿真及电子器件性能分析.E-mail:lekuncui@sina.com;常红梅 女,1970年生于陕西耀州人,现为陕西理工大学机械工程学院副教授,硕士,主要研究方向为:集成传感器与执行器、铁电材料与器件.E-mail:chm130002@snut.edu.cn
  • 基金资助:
    陕西省教育厅专项科学研究计划(No.17JK0144,No.18JK0151);陕西省工业自动化重点实验室项目(No.09JS045);陕西理工大学人才启动项目(No.SLGQD2017-19)

Effect of SiO2 Modification of Bi1.5Zn1.0Nb1.5O7 Gate Insulator on the Performance of ZnO-TFTs

YE Wei, CUI Li-kun, CHANG Hong-mei   

  1. School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong, Shaanxi 723001, China
  • Received:2018-12-17 Revised:2019-01-29 Online:2019-06-25 Published:2019-06-25

摘要: 具有高介电常数的栅绝缘层材料存在某种极化及耦合作用,使得ZnO-TFTs具有高的界面费米能级钉扎效应、大的电容耦合效应和低的载流子迁移率.为了解决这些问题,本文提出了一种使用SiO2修饰的Bi1.5Zn1.0Nb1.5O7作为栅绝缘层的ZnO-TFTs结构,分析了SiO2修饰对栅绝缘层和ZnO-TFTs性能的影响.结果表明,使用SiO2修饰后,栅绝缘层和ZnO-TFTs的性能得到显著提高,使得ZnO-TFTs在下一代显示领域中具有非常广泛的应用前景.栅绝缘层的漏电流密度从4.5×10-5A/cm2降低到7.7×10-7A/cm2,粗糙度从4.52nm降低到3.74nm,ZnO-TFTs的亚阈值摆幅从10V/dec降低到2.81V/dec,界面态密度从8×1013cm-2降低到9×1012cm-2,迁移率从0.001cm2/(V·s)升高到0.159cm2/(V·s).

关键词: SiO2薄膜, 氧化锌薄膜晶体管, 修饰层, Bi1.5Zn1.0Nb1.5O7薄膜, 射频磁控溅射

Abstract: The gate insulator material with high dielectric constant has some polarization and coupling effect,which makes ZnO-TFTs have high interface Fermi level pinning effect,large capacitive coupling effect and low carrier mobility.To solve these problems,in this paper,a kind of ZnO-TFTs structure using SiO2 modification of Bi1.5Zn1.0Nb1.5O7 as gate insulator was proposed.The effect of SiO2 modification on the performance of gate insulator and ZnO-TFTs was systematically investigated.The results showed that the properties of gate insulators and ZnO-TFTs were significantly improved after SiO2 modification,which makes ZnO-TFTs have a very wide application prospect in the next generation display field.The leakage current density and roughness of gate insulators decreased from 4.5×10-5A/cm2 to 7.7×10-7A/cm2 and from 4.52nm to 3.74nm,respectively.The sub-threshold swing and interface state density of ZnO-TFTs decreased from 10V/dec.to 2.81V/dec.and from 8×1013cm-2 to 9×1012cm-2,respectively.The mobility of ZnO-TFTs increased from 0.001cm2/(V·s) to 0.159cm2/(V·s).

Key words: SiO2 thin films, ZnO-TFTs, modification layer, Bi1.5Zn1.0Nb1.5O7 thin films, RF magnetic sputtering

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