电子学报 ›› 2020, Vol. 48 ›› Issue (8): 1631-1634.DOI: 10.3969/j.issn.0372-2112.2020.08.023

所属专题: 微波器件

• 学术论文 • 上一篇    下一篇

基于NV色心的晶体管放大器近场分布成像

姜海峰1, 陈国彬1,2, 郭志刚1, 和文豪1, 顾邦兴1, 王昊1, 杜关祥1   

  1. 1. 南京邮电大学通信与信息工程学院, 江苏南京 210003;
    2. 宿迁学院机电工程学院, 江苏宿迁 223800
  • 收稿日期:2019-12-02 修回日期:2020-02-27 出版日期:2020-08-25 发布日期:2020-08-25
  • 通讯作者: 杜关祥
  • 作者简介:姜海峰 男,1994年出生,江苏泰州人,2017年在天津职业技术师范大学获得通信工程学士学位,目前正在南京邮电大学通信与信息工程学院攻读硕士学位,他目前的研究方向为新一代量子显微成像技术. E-mail:1017935063@qq.com;陈国彬 男,1987年出生,内蒙古呼伦贝尔人,2005年至2015年在中国太原中国北方大学获得学士、硕士和博士学位.2015年进入中国宿迁宿迁学院任教.自2018年起,他在中国南京邮电大学彼得·格伦伯格研究中心担任博士后研究员.他目前的研究兴趣包括从直流到高频的磁场矢量传感和成像. E-mail:cgb8241016@163.com
  • 基金资助:
    国家重点研发计划(No.2017YFB0403602);江苏省特聘教授项目(No.RK002STP15001);南京邮电大学校长特聘教授项目(No.NY214136);宿迁市产业发展引导资金项目(No.K201912);江苏省自然科学基金(No.SBK2020041231)

Near Field Distribution Imaging of Transistor Amplifier Based on NV Color Center

JIANG Hai-feng1, CHEN Guo-bin1,2, GUO Zhi-gang1, HE Wen-hao1, GU Bang-xing1, WANG Hao1, DU Guan-xiang1   

  1. 1. College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing Jiangsu 210003, China;
    2. Electromechanic Engineering College, Suqian College, Suqian, Jiangsu 223800, China
  • Received:2019-12-02 Revised:2020-02-27 Online:2020-08-25 Published:2020-08-25

摘要: 微波毫米波芯片非破坏高分辨率近场分布成像对高频射频芯片的功能和失效分析至关重要.本实验基于金刚石NV(Nitrogen-Vacancy)色心这一独特的量子体系,选取直径约为14μm的金刚石样品,将其粘附于20μm直径的光纤锥形尖端,制备成高分辨、非破坏、微型化的探针,通过分析NV色心在微波场变化中的基态自旋演化规律,采用全光学的方法,一次性成像,获得芯片表面整体场分布.本文给出了氮化镓高电子迁移率晶体管的近场分布成像图,拟合出光学探测磁共振(Optically Detected Magnetic Resonance,ODMR)谱图以及Rabi谱图,并对成像结果进行了分析.这一系统具有高效、高分辨、高灵敏度、对近场干扰小等优势,有望为高集成度微波电路故障诊断、天线辐射剖面、微波集成电路电磁兼容测试等应用提供一种全新的方案.

关键词: 金刚石NV色心, 光学探测磁共振, 微波场成像, 高分辨率

Abstract: The nondestructive and high-resolution near-field distribution imaging of microwave and millimeter wave chips is very important for the function and failure analysis of RF chips.This experiment is based on the unique quantum system of diamond NV(nitrogen-vacancy)color center.A diamond sample with a diameter of about 14 μ m is selected and adhered to the tapered tip of a 20 μ m fiber.A high-resolution,non-destructive and miniaturized probe is prepared by analyzing the ground state spin evolution law of NV color center in the change of microwave field,and the all optical method is used.The whole field distribution on the chip surface is obtained by imaging.In this paper,the near-field distribution image of GaN high electron mobility transistor is given.The ODMR spectrum and Rabi spectrum are fitted,and the imaging results are analyzed.This system has the advantages of high efficiency,high resolution,high sensitivity and low near-field interference.It is expected to provide a new scheme for the application of high integration microwave circuit fault diagnosis,antenna radiation profile,microwave integrated circuit electromagnetic compatibility test,etc.

Key words: nitrogen vacancy(NV)center in diamond, optical detection magnetic resonance, microwave field imaging, high resolution

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