首次提出"发光畴"模型对强电场下GaAs光电导开关高倍增工作模式的物理机制进行解释.其要点是:光注入载流子引起开关电场畸变,开关偏置在触发电场阈值下因负阻效应产生高场畴,畴内发生碰撞电离引起载流子的雪崩倍增,相伴而生的辐射复合发射光子替代了已消失的触发光脉冲,畴的运动与发光使载流子以10⁸cm/s的速度穿越电极间隙,畴生存条件决定Lock-on电场,当外电路的控制使开关电场不能维持畴的生存时,开关电阻恢复.

A model of luminous charge domain to analyze the characteristic of photoconductive switches has been first proposed.The switching procedure of high-gain photoconductive switches can be described with an optically activated luminous charge domain.The formation,radiation transit and accumulations of the charge domain are related with the triggering and sustaining phase of photoconductive switches,respectively.