The unified 1/f noise model,such as BSIM3,has been widely used as noise prediction and analysis model,and it works very well in most cases.However,based on physical analysis in [1],it is pointed out that the unified 1/f noise model may not be suitable to predict the 1/f noise for p-type MOSFETs in linear regime because it underestimates noise power so much as bias Vgs increases.In this paper,a physically based expression for mobility fluctuation (MF) 1/f noise model is derived and simulation results for the new MF model and unified 1/f noise are presented together in linear region.The results show that the new models are in agreement with the experimental data well.
XU Jian-sheng;ZHOU Qiu-zhan;ZHANG Xin-fa.
A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region[J]. Acta Electronica Sinica, 2002, 30(8): 1192-1195.