基于迁移率波动的MOSFET线性区域1/f噪声模型

徐建生;周求湛;张新发

电子学报 ›› 2002, Vol. 30 ›› Issue (8) : 1192-1195.

PDF(174 KB)
PDF(174 KB)
电子学报 ›› 2002, Vol. 30 ›› Issue (8) : 1192-1195.
论文

基于迁移率波动的MOSFET线性区域1/f噪声模型

  • 徐建生, 周求湛, 张新发
作者信息 +

A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region

  • XU Jian-sheng, ZHOU Qiu-zhan, ZHANG Xin-fa
Author information +
文章历史 +

摘要

统一的1/f噪声模型,例如BSIM3模型,已经在噪声预测与分析中有着广泛的应用,在多数情况下有很好的效果.然而文献[1]中基于物理机理分析的研究表明,统一的1/f噪声模型对处于线性区p-MOSFET不能进行正确的描述:当偏置电压Vgs增加时,该模型低估了噪声功率的增加.据此,本文提出了一种基于物理机理的迁移率波动(MF)1/f噪声模型,并给出了新MF模型与统一的1/f噪声模型在线性区的仿真结果.从仿真结果可以看出,新噪声模型更接近于测试的结果.

Abstract

The unified 1/f noise model,such as BSIM3,has been widely used as noise prediction and analysis model,and it works very well in most cases.However,based on physical analysis in [1],it is pointed out that the unified 1/f noise model may not be suitable to predict the 1/f noise for p-type MOSFETs in linear regime because it underestimates noise power so much as bias Vgs increases.In this paper,a physically based expression for mobility fluctuation (MF) 1/f noise model is derived and simulation results for the new MF model and unified 1/f noise are presented together in linear region.The results show that the new models are in agreement with the experimental data well.

关键词

闪烁(1/f)噪声 / 迁移率波动 / 载流子数量波动 / 统一的1/f噪声模型 / MOSFETs

Key words

1/f noise / mobility fluctuation / number fluctuation / unified 1/f noise model / MOSFETs

引用本文

导出引用
徐建生;周求湛;张新发. 基于迁移率波动的MOSFET线性区域1/f噪声模型[J]. 电子学报, 2002, 30(8): 1192-1195.
XU Jian-sheng;ZHOU Qiu-zhan;ZHANG Xin-fa. A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region[J]. Acta Electronica Sinica, 2002, 30(8): 1192-1195.
中图分类号: TN722   
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