本文研究了负偏置温度不稳定性(NBTI)对单粒子瞬态(SET)脉冲产生与传播过程的影响.研究结果表明:NBTI能够导致SET脉冲在产生与传播的过程中随时间而不断展宽.本文还基于工艺计算机辅助设计模拟软件(TCAD)进行器件模拟,提出了一种在130nm体硅工艺下,计算SET脉冲宽度的解析模型,并结合NBTI阈值电压退化的解析模型,建立了预测SET脉冲宽度在产生的过程中随PMOS器件的NBTI退化而不断展宽的解析模型,TCAD器件模拟的结果与解析模型的预测一致;本文还进一步建立了预测SET脉冲宽度在传播的过程中随PMOS器件的NBTI退化而不断展宽的解析模型,SPICE电路模拟的结果与解析模型所预测的结论一致.

The effects of negative bias temperature instability (NBTI) on single event transient (SET) pulse are studied.The results show that:NBTI can result in SET pulse broadening in the production and propagation.An analytical model is developed to calculate SET pulse width in a 130nm CMOS process based on TCAD device simulations,combining with a reaction-diffusion (R-D) based NBTI degradation model,a novel analytical model to predict SET pulse broadening induced by NBTI is proposed,the results from TCAD simulations are in agreement with the ones predicted by this model;An analytical model to predict SET pulse broadening in the propagation is also proposed,SPICE simulations show consistent results with the ones predicted by the model.