[1] U K Mishra,L Shen,T E Kazior,Y Wu.GaN-based RF power devices and amplifiers[J].Proceedings of the IEEE,2008,96(2):287-305. [2] P Saad,C Fager,H Cao,H Zirath,K Andersson.Design of a highly efficient 2-4-GHz octave bandwidth GaN-HEMT power amplifier[J].IEEE Transactions on Microwave Theory and Techniques,2010,58(7):1677-1685. [3] S Masuda,A Akasegawa,T Ohki,et al.Over 10W C-Ku band GaN MMIC non-uniform dist ributed power amplifier with broadband couplers[A].IEEE Mtt-S International M icrowave Symposium Digest[C].Anaheim,CA:IEEE Press,2010.1388-1391. [4] 陈雪军,高建峰,陈效建,林金庭.2~6GHz GaAs单片功率放大器[J].电子学报,2000,28( 11):140-142. CHEN Xue-jun,GAO Jian-feng,CHEN Xiao-jian,LIN Jin-ting.A 2-26 GHz GaAs mono lithic power amplifier[J].Acta Electronica Sinica,2000,28(11):140-142.(in Chin ese) [5] S C Cripps.RF Power Amplifiers for Wireless Communications[M].Norwood,MA:Artec h House,2006. [6] 孙文宾,黄云新,刘鹏.一种设计宽带高效E类功率放大器的方法——参数补偿压缩法[J].电 子学报,2001,29(11):136-139. SUN Wen-bin,HUANG Yun-xin,LIU Peng.A method to design broadband high efficienc y class E amplifier—parameter compensation and compress[J].Acta Electronica S inica,2001,29(11):136-139.(in Chinese) [7] Y-F Wu,R York,S Keller,B Keller,U Mishra.3-9-GHz Gan-based microwave power a mplifiers with L-C-R broadband matching[J].IEEE Microwave and Guided Wave Le tters,1999,9(8):314-316. [8] 恽小华,孙琳琳,楚然,申明磊.一种基于双极支线功分/功合网络的毫米波固态功率放大器[J].电子学报,2006,34(12A):2347-2349. YUN Xiao-hua,SUN Lin-lin,CHU Ran,SHEN Ming-lei.A millimeter-wave solid state power amplifier based on two stage branch dividing/combing network[J].Acta El ectronica Sinica,2006,34(12A):2347-2349.(in Chinese) [9] 高葆新,等.微波集成电路[M].北京:国防工业出版社,1995. [10] R M Fano.Theoretical limitations on the broadband matching of arbitrary impedanc es [J].Journal of the Franklin Institute,1950,249(1):57-58. [11] J Lange.Interdigitated stripline quadrature hybrid[J].IEEE Transactions on Mic rowave Theory and Techniques,1969,17(12):1150-1151. [12] A Presser.Interdigitated microstrip coupler design[J].IEEE Transactions on Mic rowave Theory and Techniques,1978,26(10):801-805. [13] R M Osmani.Synthesis of Lange couplers[J].IEEE Transactions on Microwave Theor y and Techniques,1981,29(2):168-170. [14] S Azam,R Jonsson,Q Wahab.Designing,fabrication and characterization of power amp lifiers based on 10-Watt SiC MESFET and GaN HEMT at microwave frequencies[A]. P roceedings of 38th European Microwave Conference[C].USA:IEEE Press,2008.444-44 7. [15] P Wright,J Lees,J Benedikt,P Tasker,S Cripps.A methodology for realizing high ef ficiency class-j in a linear and broadband PA[J].IEEE Transactions on Microwa ve Theory and Techniques,2009,57(12):3196-3204. [16] S Azam,C Svensson,Q Wahab,R Jonsson.Comparison of two GaN transistor technologie s in broadband power amplifiers [J].Microwave Journal,2010,53(4):184-192. |