[1] Tut T,Gokkavas M,Butun B,et al.Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes[J].Applied Physics Letters,2006,89(18):183524.
[2] Xie X H,Zhang Z Z,Shan C X,et al.Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction[J].Applied Physics Letters,2012,101(8):081104.
[3] Yu J,Shan C X,Huang X M,et al.ZnO-based ultraviolet avalanche photodetectors[J].Journal of Physics D:Applied Physics,2013,46(30):305105.
[4] Liao M Y,Koide Y,Alvarez J.Single Schottky-barrier photodiode with interdigitated-finger geometry:Application to diamond[J].Applied Physics Letters,2007,90(12):123507.
[5] Takagi T,Tanaka H,Fujita S,et al.Molecular beam epitaxy of high magnesium content single-phase wurzite MgxZn1-xO alloys (x0.5) and their application to solar-blind region photodetectors[J].Japanese Journal of Applied Physics,2003,42(4B):L401-L403.
[6] Huang Z Q,Li J F,Zhang W L,et al.AlGaN solar-blind avalanche photodiodes with enhanced multiplication gain using back-illuminated structure[J].Applied Physics Express,2013,6(5):054101.
[7] Mahmoud W E.Solar blind avalanche photodetector based on the cation exchange growth of β-Ga2O3/SnO2 bilayer heterostructure thin film[J].Solar Energy Materials and Solar Cells,2016,152:65-72.
[8] Suzuki R,Nakagomi S,Kokubun Y,et al.Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing[J].Applied Physics Letters,2009,94(22):222102.
[9] Zhao X L,Wu Z P,Guo D Y,et al.Growth and characterization of α-phase Ga2-xSnxO3 thin films for solar-blind ultraviolet applications[J].Semiconductor Science and Technology,2016,31(6):065010.
[10] Guo D Y,Wu Z P,Li P G,et al.Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology[J].Optical Materials Express,2014,4(5):1067-1076.
[11] Qu Y Y,Wu Z P,Ai M L,et al.Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes[J].Journal of Alloys and Compounds,2016,680:247-251.
[12] Yu F P,Ou S L,Wuu D S.Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors[J].Optical Materials Express,2015,5(5):1240-1249.
[13] Cui S J,Mei Z X,Zhang Y H,et al.Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates[J].Advanced Optical Materials,2017,5(19):1700454.
[14] Suzuki R,Nakagomi S,Kokubun Y,et al.Flame detection by a β-Ga2O3-based sensor[J].Japanese Journal of Applied Physics,2009,48(1):011605.
[15] Pearton S J,Yang J C,Cary P H,et al.A review of Ga2O3 materials,processing,and devices[J].Applied Physics Reviews,2018,5(1):011301.
[16] Ueda N,Hosono H,Waseda R,et al.Anisotropy of electrical and optical properties in β-Ga2O3 single crystals[J].Applied Physics Letters,1997,71(7):933-935.
[17] Dong L P,Yu J G,Jia R X,et al.Self-powered MSM deep-ultraviolet β-Ga2O3 photodetector realized by an asymmetrical pair of Schottky contacts[J].Optical Materials Express,2019,9(3):1191-1199.
[18] Pratiyush A S,Xia Z B,Kumar S,et al.MBE-grown β-Ga2O3-based Schottky UV-C photodetectors with rectification ratio~107[J].IEEE Photonics Technology Letters,2018,30(23):2025-2028.
[19] Weng W Y,Hsueh T J,Chang S J,et al.A-GaO/GaN Schottky-barrier photodetector[J].IEEE Photonics Technology Letters,2011,23(7):444-446.
[20] Oshima T,Okuno T,Arai N,et al.Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga2O3 substrates[J].Applied Physics Express,2008,1(1):011202. |