基于表面势的增强型p-GaN HEMT器件模型

doi:10.12263/DZXB.20210737

电子学报 ›› 2022, Vol. 50 ›› Issue (5): 1227-1233.DOI: 10.12263/DZXB.20210737

基于表面势的增强型p-GaN HEMT器件模型

葛晨¹, 李胜², 张弛², 刘斯扬², 孙伟锋¹^,²

^1.东南大学微电子学院，江苏无锡 214000
^2.东南大学电子科学与工程学院，江苏南京 210096

收稿日期:2021-06-10 修回日期:2021-10-22 出版日期:2022-05-25
- 通讯作者:
- 刘斯扬
- 作者简介:
- 葛晨　女,1997年5月出生于江苏宿迁.现为东南大学微电子学院研究生.研究方向为功率半导体器件可靠性.E‑mail: 220194942@seu.edu.cn
  李胜　男,1993年4月出生于湖北随州.2016年获得郑州大学电子科学与技术专业学士学位.现为东南大学国家ASIC系统工程研究中心微电子学与固态电子学博士.主要研究方向为GaN功率器件的可靠性和建模.E‑mail: seulisheng@seu.edu.cn
  张弛　男,1995年9月出生于江苏扬州.2017年获得合肥工业大学电子科学与技术学士学位.现为东南大学国家ASIC系统工程研究中心微电子与固态电子学博士.主要研究方向为GaN功率器件设计与可靠性.E‑mail: galazhang@seu.edu.cn
  刘斯扬男,1987年5月出生于安徽合肥.现为东南大学电子科学与工程学院教授、博士生导师.主要研究方向为新型功率器件设计、功率集成电路设计和功率器件建模.E⁃mail: liusy2017@seu.edu.cn
  孙伟锋　男,1977年5月出生于江苏武进.现为东南大学电子科学与工程学院教授、博士生导师.主要研究方向为新型功率器件设计、功率集成电路设计、功率器件建模和射频器件设计.E‑mail: swffrog@seu.edu.cn
- 基金资助:
- 国家重点研发计划 (2020YFF0218501); 江苏省科技成果转化基金 (BA2020027); 东南大学至善学者 (2238185478)

Surface Potential Based E-mode p-GaN HEMT Device Model

GE Chen¹, LI Sheng², ZHANG Chi², LIU Si-yang², SUN Wei-feng¹^,²

^1.School of Microelectronic, Southeast University, Wuxi, Jiangsu 214000, China
^2.School of Electronic Engineering, Southeast University, Nanjing, Jiangsu 210096, China

Received:2021-06-10 Revised:2021-10-22 Online:2022-05-25 Published:2022-06-18
- Corresponding author:
- LIU Si-yang
- Supported by:
- National Key Research and Development Program of China (2020YFF0218501); Fund for Scientific and Technological Achievement Transformation of Jiangsu Province (BA2020027); Zhishan Young Scholar of Southeast University (2238185478)

摘要/Abstract

摘要：

为了满足功率电路及系统设计对p-GaN HEMT（High Electron Mobility Transistor）器件模型的需求，本文建立了一套基于表面势计算方法的增强型p-GaN HEMT器件SPICE（Simulation Program with Integrated Circuit Emphasis）模型.根据耗尽型GaN HEMT器件和增强型p-GaN HEMT器件结构的对比，推导出p-GaN栅结构电压解析公式.考虑到p-GaN栅掺杂效应和物理机理，推导出栅电容和栅电流解析公式.同时，与基于表面势的高电子迁移率晶体管高级SPICE模型内核相结合，建立完整的增强型p-GaN HEMT功率器件的SPICE模型.将所建立的SPICE模型与实测结果进行对比验证.结果表明，所建立的模型准确实现了包括转移特性、输出特性、栅电容以及栅电流在内的p-GaN HEMT器件的电学特性.模型仿真数据与实测数据拟合度误差均小于5%.本文所提出的增强型p-GaN HEMT器件模型在进行电路设计时具有重要的应用价值.

关键词: 增强型, 高级Simulation Program with Integrated Circuit Emphasis模型, p-GaN栅, 转移特性, 输出特性, 栅电容, 栅电流

Abstract:

To meet the requirements for the power circuit and system design for enhancement-mode p-GaN HEMT(High Electron Mobility Transistor) device SPICE(Simulation Program with Integrated Circuit Emphasis) models, a model of enhancement-mode p-GaN HEMT device based on the surface potential calculation method is proposed in the paper. According to the comparison between the structures of the depletion-mode GaN HEMT device and the enhancement-mode p-GaN HEMT device, analytical formulas for the voltage of the p-GaN gate structure are derived. Considering the doping effect of p-GaN gate and physical mechanism, analytical formulas for the gate current and gate capacitance are derived. At the same time, combined with the ASM(Advanced SPICE Model) core, a complete SPICE model of enhancement-mode p-GaN HEMT power device is established. The established SPICE model is compared and verified with the measured results. The results show that the proposed model accurately realizes the electrical characteristics of p-GaN HEMT device including transfer characteristics, output characteristics, gate capacitance, and gate current. The simulation data of the model fits the measured data of the actual enhancement-mode p-GaN HEMT device well, and the fitting errors of the model simulation data and the measured data are less than 5%. The enhancement-mode p-GaN HEMT device model proposed in the paper, which is based on the perfect ASM-HEMT and considers the doping effect of p-GaN layer and physical mechanism of p-GaN gate structure, has important application value in circuit design.

Key words: enhancement-mode, advanced simulation program with integrated circuit emphasis model, p-GaN gate, transfer characteristics, output characteristics, gate capacitance, gate current

中图分类号:

TN389

葛晨, 李胜, 张弛, 刘斯扬, 孙伟锋. 基于表面势的增强型p-GaN HEMT器件模型[J]. 电子学报, 2022, 50(5): 1227-1233.

GE Chen, LI Sheng, ZHANG Chi, LIU Si-yang, SUN Wei-feng. Surface Potential Based E-mode p-GaN HEMT Device Model[J]. Acta Electronica Sinica, 2022, 50(5): 1227-1233.

图/表 8

图1 GaN HEMT器件与p-GaN HEMT器件结构对比图

图2 GaN HEMT ASM建模流程图

图3 p-GaN HEMT器件IV特性模型解析图

图4 p-GaN HEMT栅电容模型等效电路图

图5 p-GaN HEMT栅电流模型等效电路图

表1 p?GaN HEMT器件部分参数

参数名称	参数值
栅长L	1μm
栅宽W	9μm
栅漏间距L_GD	1μm
栅源间距L_GS	1μm

图6 增强型p-GaN HEMT器件模型仿真结果图

图7 增强型p-GaN HEMT器件模型拟合结果图

参考文献 12

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基于表面势的增强型p-GaN HEMT器件模型

Surface Potential Based E-mode p-GaN HEMT Device Model

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