基于CNFET的高性能三值SRAM-PUF电路设计

doi:10.3969/j.issn.0372-2112.2017.05.010

电子学报 ›› 2017, Vol. 45 ›› Issue (5): 1090-1095.DOI: 10.3969/j.issn.0372-2112.2017.05.010

基于CNFET的高性能三值SRAM-PUF电路设计

汪鹏君, 龚道辉, 张会红, 康耀鹏

宁波大学电路与系统研究所, 浙江宁波 315211

收稿日期:2016-08-11 修回日期:2016-11-25 出版日期:2017-05-25
- 通讯作者:
- 汪鹏君
- 作者简介:
- 龚道辉 男,1991年出生于湖南岳阳,硕士研究生,主要从事多值逻辑电路设计及理论的研究;张会红 女,1976年出生于河北定州,副教授,硕士研究生导师,主要主要从事高信息密度和低功耗集成电路理论及优化设计;康耀鹏 男,1992年出生于浙江台州,硕士研究生,主要从事多值逻辑电路设计及理论的研究.
- 基金资助:
- 国家自然科学基金 (No.61474068，No.61234002）; 浙江省公益性技术应用研究计划项目 (No.2016C31078）; 浙江省自然科学基金 (No.LQ14F040001）; 宁波市自然科学基金 (No.2015A610107）

High Performance Ternary SRAM-PUF Circuit Based on CNFET

WANG Peng-jun, GONG Dao-hui, ZHANG Hui-hong, KANG Yao-peng

Institute of Circuits and Systems, Ningbo University, Ningbo, Zhejiang 315211, China

Received:2016-08-11 Revised:2016-11-25 Online:2017-05-25 Published:2017-05-25
- Supported by:
- National Natural Science Foundation of China (No.61474068, No.61234002); Non-profit Technology Application Research Project of Zhejiang Province (No.2016C31078); National Natural Science Foundation of Zhejiang Province, China (No.LQ14F040001); Ningbo Natural Science Fund (No.2015A610107)

摘要/Abstract

摘要：

通过对碳纳米管场效应晶体管（Carbon Nanotube Field Effect Transistor，CNFET）和物理不可克隆函（Physical Unclonable Functions，PUF）电路的研究，提出一种高性能三值SRAM-PUF电路结构.该电路结构首先利用交叉耦合三值反相器产生随机电流，并对其电流进行失配分析；然后结合三值SRAM单元的电流竞争得到随机的、不可克隆的三值输出信号"0"、"1"和"2".在32nm CNFET标准模型库下，采用HSPICE对所设计的三值SRAM-PUF电路进行Monte Carlo仿真，分析其随机性、唯一性等性能.模拟结果表明所设计的三值SRAM-PUF电路归一化随机性偏差和唯一性偏差均为0.03%，且与传统二值CMOS设计的PUF电路相比工作速度提高33%，激励响应对数量为原来的（1.5）ⁿ倍.

关键词: 碳纳米管场效应晶体管, 三值逻辑, SRAM-PUF, 随机性, 唯一性

Abstract:

By researching the Carbon Nanotube Field Effect Transistor(CNFET) and the Physical Unclonable Functions(PUF) circuit,a structure of high-performance ternary SRAM-PUF circuit is proposed.In this circuit structure,the cross-coupling ternary inverters generate random current,which is analyzed according to the mismatch feature.After competing the random current of ternary SRAM,it produces three-valued signal,such as "0","1" and "2".Under Stanford University 32nm CNFET standard model,HSPICE is used for Monte Carlo simulation to analysis the randomness,uniqueness and other features.And simulation results show that the randomness variation and uniqueness can be achieved at 0.03% after normalization.Comparing with conventional binary CMOS PUF circuit,the proposed circuit improves the speed by 33%,and increases the number of challenge-response by(1.5)ⁿ times.

Key words: carbon nanotube field effect transistor(CNFET), three-valued logic, SRAM-PUF, randomness, uniqueness

中图分类号:

TP331

汪鹏君, 龚道辉, 张会红, 等. 基于CNFET的高性能三值SRAM-PUF电路设计[J]. 电子学报, 2017, 45(5): 1090-1095.

WANG Peng-jun, GONG Dao-hui, ZHANG Hui-hong, et al. High Performance Ternary SRAM-PUF Circuit Based on CNFET[J]. Acta Electronica Sinica, 2017, 45(5): 1090-1095.

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基于CNFET的高性能三值SRAM-PUF电路设计

High Performance Ternary SRAM-PUF Circuit Based on CNFET

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