缝隙阵列的时域溅射特性研究

doi:10.3969/j.issn.0372-2112.2018.08.032

电子学报 ›› 2018, Vol. 46 ›› Issue (8): 2030-2034.DOI: 10.3969/j.issn.0372-2112.2018.08.032

缝隙阵列的时域溅射特性研究

侯海健^1,2, 李大伟³, 王均宏^1,2

1. 全光网络与现代通信网教育部重点实验室, 北京 100044;
2. 北京交通大学光波技术研究所, 北京 100044;
3. 中国运载火箭技术研究院, 北京 100076

收稿日期:2017-04-05 修回日期:2018-05-02 出版日期:2018-08-25
- 作者简介:
- 侯海健 女,1989年出生,北京人,北京交通大学电磁场与微波技术实验室在读博士生,主要研究方向为周期性结构非正弦波时域散射机理研究.E-mail:12111005@bjtu.edu.cn;李大伟 男,1988年出生,内蒙古赤峰人,工程师,工学博士,中国运载火箭技术研究院,主要研究方向为天线与电波传播、电磁兼容、电气系统总体设计.E-mail:davidool@126.com;王均宏 男,1965年出生,江苏人,北京交通大学教授、博士生导师,IEEE高级会员,2008年获得国家杰出青年基金,主要研究方向为无线通信射频链路基础理论与关键技术、天线理论与技术、漏泄波导、微波毫米波非均匀传输线及无源器件、电磁辐射与散射、瞬态电磁场理论与技术等.

Study on the Time Domain Sputtering Effect and Scattering of Slot Arrays of Different Sizes

HOU Hai-jian^1,2, LI Da-wei³, WANG Jun-hong^1,2

1. Institute of Lightwave Technology, Beijing Jiaotong Univeristy, Beijing 100044, China;
2. Key Laboratory of All Optical Network & Advanced Telecommunication Network of MOE, Beijing Jiaotong University, Beijing 100044, China;
3. China Acadenmy of Launch Vehicle Technology, Beijing 100076, China

Received:2017-04-05 Revised:2018-05-02 Online:2018-08-25 Published:2018-08-25

摘要/Abstract

摘要： 时域溅射，是散射体结构不同部分产生的散射回波在远场叠加时，其时域波形在开始部分出现的不稳定的现象.对于低散射目标，只有在回波叠加稳定后，其散射电场的幅度才变得很低，而在开始的几个电波周期内会有比较强的散射电场.本文对缝隙阵列的时域溅射特性进行研究，采用周期边界时域有限差分（Finite-Difference Time-Domain，FDTD）算法对不同尺寸的缝隙阵列的时域溅射特性进行了仿真，提取了其等效电路参数，并采用等效电路法分析了缝隙宽度引起的并联电容对正弦波时域溅射和高斯脉冲时域散射特性的影响.分析结果发现：当并联电容降低的时候，时域反射系数的包络值下降速度增加，导致溅射现象的最大值降低.理论结果得到了实验验证.

关键词: 时域散射, 时域有限差分算法, 频率选择性表面, 雷达散射截面

Abstract: Time domain sputtering effect is the phenomenon that the time domain scattering waveform is large and unstable at the beginning when the scatterings from different parts of the scatterer are overlapped in the far field.For low RCS targets,the amplitudes of the total scattering decreases only after the scatterings from different parts are overlapped and stabilized.And there is a relatively strong total scattering in the beginning.In this paper,the time domain sputtering characteristics of slot arrays with different sizes are studied and simulated by finite-difference time domain algorithm.The equivalent circuit parameters are extracted by the equivalent circuit method.The effects of parallel capacitances caused by widths of the slots on sine wave time-domain sputtering and Gaussian pulse time-domain characteristics are analyzed by the equivalent circuit method.The results show that when the parallel capacitance decrease,the decrease rate of the envelope value of the time domain reflection coefficient increase,which leads to the decrease of the maximum value of the sputtering effect.The theoretical results have been verified by experiments.

Key words: time domain scattering, finite-difference time domain algorithm(FDTD), frequency selective surface(FSS), radar cross section(RCS)

中图分类号:

TN95

侯海健, 李大伟, 王均宏. 缝隙阵列的时域溅射特性研究[J]. 电子学报, 2018, 46(8): 2030-2034.

HOU Hai-jian, LI Da-wei, WANG Jun-hong. Study on the Time Domain Sputtering Effect and Scattering of Slot Arrays of Different Sizes[J]. Acta Electronica Sinica, 2018, 46(8): 2030-2034.

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缝隙阵列的时域溅射特性研究

Study on the Time Domain Sputtering Effect and Scattering of Slot Arrays of Different Sizes

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