电子学报 ›› 2018, Vol. 46 ›› Issue (8): 2026-2029.DOI: 10.3969/j.issn.0372-2112.2018.08.031

• 学术论文 • 上一篇    下一篇

基于磷钝化栅介质的1.2kV 4H-SiC DMOSFET

刘佳佳, 刘英坤, 谭永亮, 张力江, 崔玉兴   

  1. 中国电子科技集团公司第十三研究所, 河北石家庄 050051
  • 收稿日期:2017-12-13 修回日期:2018-03-30 出版日期:2018-08-25
    • 通讯作者:
    • 刘佳佳
    • 作者简介:
    • 刘英坤 男,1965年生于河北新乐,博士,研究员,硕士生导师,河北半导体研究所副总工程师,长期从事微波功率器件、半导体分立器件及微电子工艺技术研究.E-mail:ykliuyk@sina.com

1.2kV 4H-SiC DMOSFET with Phosphorous Passivated Gate Dielectric

LIU Jia-jia, LIU Ying-kun, TAN Yong-liang, ZHANG Li-jiang, CUI Yu-xing   

  1. The 13 th Research Institute, CETC, Shijiazhuang, Hebei 050051, China
  • Received:2017-12-13 Revised:2018-03-30 Online:2018-08-25 Published:2018-08-25

摘要: 本文对比了NO退火和磷掺杂两种栅钝化工艺,其中磷钝化采用了平面扩散源进行掺杂,通过C-V特性进行了4H-SiC/SiO2界面特性评价,使用Terman法分析计算获得距导带底0.2-0.4eV范围内界面态密度.结果表明引入磷比氮能更有效降低界面态密度,提高沟道载流子迁移率.其次,对比了两种栅钝化工艺制备的4H-SiC DMOSFET器件性能,实验表明采用磷钝化工艺处理的器件性能更优.最后,基于磷掺杂钝化工艺首次制备出击穿电压为1200V、导通电阻为20mΩ、漏源电流为75 A、阈值电压为2.4V的4H-SiC DMOSFET.

关键词: 4H-SiC MOSFET, 4H-SiC/SiO2界面, 磷钝化, 界面态密度

Abstract: To improve the 4H-SiC/SiO2 interface quality phosphorous-doped technology and nitrogen-annealed technology were introduced.The phosphorous atoms were introduced into the 4H-SiC/SiO2 interface by thermal annealing with a planar diffusion source (PDS).Current-voltage test was used to characterize the interface quality.To obtain the interface state density (Dit) lying energetically within 0.2eV-0.4eV of the conduction band edge (Ec),the C-V data was analyzed by using Terman method.It is apparent that the phosphorous-doped technology can reduce the interface state density near the conduction band of 4H-SiC effectively and increase the channel mobility and decrease the on resistance.Compared with NO passivated devices,P-doped devices have better performance.What's more,this technology has been applied to fabricate 1.2kV 4H-SiC DMOSFET firstly.Fabricated devices show a significant improvement with an on resistance of 20m Ω,drain-source current of 75A,threshold voltage of 2.4V.

Key words: 4H-SiC MOSFET, 4H-SiC/SiO2 interface, phosphorous passivation, interface states

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