[1] Saddow S E,Agarwal A.Advances in Silicon Carbide Processing and Applications[M].Boston:Artech House,2004.1-4.
[2] Afanasev V V,Bassler M,et al.Intrinsic SiC/SiO2 interface states[J].physica status solidi,1994,162:321-337.
[3] Li H F,Dimitrijev S,Harrison H B.Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC[J].IEEE Electron Device Letters,1998,19(8):279-281.
[4] Chung G Y,Tin C C,et al.Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide[J].IEEE Electron Device Letters,2001,22(4):176-178.
[5] Yang X Y,Lee B,Misra V.Electrical characteristics of SiO2 deposited by atomic layer deposition on 4H-SiC after nitrous oxide anneal[J].IEEE Transactions on Electron Devices,2016,63(7):2826-2830.
[6] Lu C Y,Tsuji T,et al.Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface[J].IEEE Electron Device Letters,2003,50(7):1582-1588.
[7] Sharma Y K,Ahyi A C,et al.Phosphorous passivation of the SiO2/4H-SiC interface[J].Solid State Electronics,2012,68:103-107.
[8] Yano H,Knanfuji N,et al.Threshold voltage instability in 4H-SiC MOSFETs with phosphorus-doped and nitrided gate oxides[J].IEEE Transactions on Electron Devices,2015,62(2):324-332.
[9] 朱巧智,王德君,赵亮.SiO2/SiC界面的Wet-ROA改性机理研究[J].固体电子学研究与进展,2009,29(3):339-342 Zhu Q Z,Wang D J,ZHAO L.The mechanism of wet-ROA process in improving SiO2/SiC interface electrical properties[J].Research & Progerss of SSE State Electronics,2009,29(3):339-342.(in Chinese)
[10] 王晓琳,刘冰冰,秦富庆,等.氮氢混合等离子体处理对SiC MOS电容可靠性的影响[J].固体电子学研究与进展,2016,36(1):71-77. Wang X L,Liu B B,et al.The effect of NH mixed plasma treatment on the reliability of SiC MOS capacitors[J].Research & Progerss of SSE State Electronics,2016,36(1):71-77.(in Chinese)
[11] Terman L M.An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes[J].Solid-State Electronics,1962,5(5):285-299.
[12] Cree.Silicon Carbide Power MOSFET C2M TM MOSFET Technology:C2M0040120D[OL].https://www.wolfspeed.com/downloads/dl/file/id/165/product/9/c2 m0040120d.pdf. |