[1] Simoen E,et al.Radiation effects in advanced multiple gate and silicon-on-insulator transistors[J].IEEE Transactions on Nuclear Science,2013,60(3):1970-1991.
[2] Oldham T R,McLean F B.Total ionizing dose effects in MOS oxides and devices[J].IEEE Transactions on Nuclear Science,2003,50(3):483-499.
[3] Fleetwood D M.Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices[J].IEEE Transactions on Nuclear Science,2013,60(3):1706-1730.
[4] Dodd P E,et al.Current and future challenges in radiation effects on CMOS electronics[J].IEEE Transactions on Nuclear Science,2010,57(4):1747-1763.
[5] Schwank J R,et al.Radiation effects in MOS oxides[J].IEEE Transactions on Nuclear Science,2008,55(4):1833-1853.
[6] Wang S H,et al.A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation[J].Journal of Applied Physics,2010,107(2):0245151-1-4.
[7] Barnaby H J.Total-ionizing-dose effects in modern CMOS technologies[J].IEEE Transactions on Nuclear Science,2006,53(6):3103-3121.
[8] Peng C,et al.Investigating the degradation mechanisms caused by the TID effects in 130nm PDSOI I/O NMOS[J].Nuclear Instruments & Methods in Physics Research Section A,2014,748:70-78.
[9] Liu S T,et al.Total dose radiation response of a 45nm SOI Technology[A].2010 IEEE International SOI Conference[C].San Diego:IEEE,2010.
[10] Madan A,et al.The enhanced role of shallow-trench isolation in Iionizing radiation damage of 65nm RF-CMOS on SOI[J].IEEE Transactions on Nuclear Science,2009,56(6):3256-3261.
[11] Liu Z L,et al.Total ionizing dose enhanced DIBL effect for deep submicron NMOSFET[J].IEEE Transactions on Nuclear Science,2011,58(3):1324-1331.
[12] Johnston A H,et al.Total dose effects in CMOS trench isolation regions[J].IEEE Transactions on Nuclear Science,2009,56(4):1941-1949.
[13] McLain M,et al.Enhanced TID susceptibility in sub-100nm bulk CMOS I/O transistors and circuits[J].IEEE Transactions on Nuclear Science,2007,54(6):2210-2217.
[14] Sentaurus Device User Guide[Z].2016.
[15] Chatterjee I,et al.Bias dependence of total-dose effects in bulk FinFETs[J].IEEE Transactions on Nuclear Science,2013,60(6):4476-4482.
[16] Ferlet-Cavrois V,et al.Worst-case bias during total dose irradiation of SOI transistors[J].IEEE Transactions on Nuclear Science,2000,47(6):2183-2188.
[17] Barnaby H J,et al.Modeling ionizing radiation effects in solid state materials and CMOS devices[J].IEEE Transactions on Circuits and Systems I,2009,56(8):1870-1883.
[18] Nandakumar M,et al.Shallow trench isolation for advanced ULSI CMOS technologies[A].1998 International Electron Devices Meeting-Technical Digest[C].San Francisco:IEEE,1998.133-136.
[19] Chang P C,et al.A highly manufacturable corner rounding solution for 0.18 mu m shallow trench isolation[A].1997 International Electron Devices Meeting-Technical Digest[C].Washington:IEEE,1997.661-664. |