电子学报 ›› 2019, Vol. 47 ›› Issue (11): 2432-2437.DOI: 10.3969/j.issn.0372-2112.2019.11.027

所属专题: 硅基半导体器件新进展

• 科研通信 • 上一篇    下一篇

一种非对称双栅应变硅HALO掺杂沟道MOSFET阈值电压解析模型

辛艳辉, 段美霞   

  1. 华北水利水电大学物理与电子学院, 河南郑州, 450046
  • 收稿日期:2018-12-30 修回日期:2019-06-10 出版日期:2019-11-25 发布日期:2019-11-25
  • 通讯作者: 辛艳辉
  • 作者简介:段美霞 女,1976年出生,河南开封人,副教授,现主要从事电子信息及数据处理方面的研究.E-mail:duanmeixia@ncwu.edu.cn
  • 基金资助:
    河南省科技公关项目(No.172102210367,No.192102210241);华北水利水电大学高层次人才科研启动项目

An Analytical Model of Threshold Voltage for the Asymmetrical Double-Material-Gate Strained Si HALO Doping Channel MOSFET

XIN Yan-hui, DUAN Mei-xia   

  1. School of Physics and Electronics, North China University of Water Resources and Electric Power, Zhengzhou, Henan 450046, China
  • Received:2018-12-30 Revised:2019-06-10 Online:2019-11-25 Published:2019-11-25

摘要: 提出了一种非对称双栅应变硅HALO掺杂沟道金属氧化物半导体场效应管结构.该器件前栅和背栅由两种不同功函数的金属构成,沟道为应变硅HALO掺杂沟道,靠近源区为低掺杂区域,靠近漏区为高掺杂区域.采用分区的抛物线电势近似法和通用边界条件求解二维泊松方程,分别求解了前背栅表面势、前背栅表面电场及前背栅阈值电压,建立了双栅器件的表面势、表面电场和阈值电压解析模型.详细讨论了物理参数对解析模型的影响.研究结果表明,该器件能够很好的抑制短沟道效应、热载流子效应和漏致势垒降低效应.模型解析结果与DESSIS仿真结果吻合较好,证明了该模型的正确性.

关键词: 应变硅, HALO掺杂沟道, 非对称双栅, 短沟道效应

Abstract: The asymmetrical double-material-gate s-Si(strained Silicon) HALO doping channel MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor) structure is proposed.The front gate and back gate are composed of two metals with different work functions.It has the higher doping concentration in the HALO doping channel end near the drain.The two-dimensional Poisson's equation is solved by applying the parabolic potential approximation and the suitable boundary condition.The analytical models of surface potential、surface electric field and threshold voltage for the double-material-gate device are constructed by solving which of the front gate and back gate.Results show that the proposed novel device is expected to suppress the short channel effect、hot carrier effect and drain induced barrier lowering.The derived analytical models accord with the DESSIS simulation results very well.

Key words: strained Si, HALO doping channel, asymmetrical double-material-gate, short channel effect

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