高频硅基光电晶体管SPICE模型的建立及关键参数的提取

doi:10.12263/DZXB.20200657

电子学报 ›› 2021, Vol. 49 ›› Issue (8): 1645-1652.DOI: 10.12263/DZXB.20200657

所属专题：硅基半导体器件新进展

高频硅基光电晶体管SPICE模型的建立及关键参数的提取

张子同, 姜岩峰

江南大学物联网工程学院，江苏无锡 214000

收稿日期:2020-07-08 修回日期:2021-03-12 出版日期:2021-08-25
- 作者简介:
- 张子同男，1996年生，江苏连云港人. 2018年毕业于江南大学微电子科学与工程系，同年进入江南大学集成电路工程专业攻读硕士学位，主要从事光电集成电路方面的研究. E-mail: 6181916020@stu.jiangnan.edu.cn
  姜岩峰（通信作者）男，1972年生，吉林四平人. 博士，教授，博士生导师. 主要从事射频集成电路设计与实现以及新型电路结构设计与实现方面的研究. E-mail: jiangyf@jiangnan.edu.en
- 基金资助:
- 国家自然科学基金 (61774078); 江苏省自然科学基金 (BK 20180626)

The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters

ZHANG Zi-tong, JIANG Yan-feng

School of Internet of Things Engineering, Jiangnan University, Wuxi, Jiangsu 214000, China

Received:2020-07-08 Revised:2021-03-12 Online:2021-08-25 Published:2021-08-25
- Supported by:
- National Natural Science Foundation of China (61774078); National Natural Science Foundation of Jiangsu Province, China (BK 20180626)

摘要/Abstract

摘要：

硅基光电晶体管在高频通信、自动控制、电力系统领域具有广泛的应用前景.从系统验证和仿真的角度，迫切需要建立光电晶体管的等效电路模型，该模型需要包含电学特性和光学特性.本文提出了一种高频(100MHz~1GHz)硅基光电晶体管的SPICE(Simulation Program with Integrated Circuit Emphasis)等效模型，包含器件的主要光电特性，通过TCAD(Technology Computer Aided Design)仿真建立了模型中关键电学和光学参数的提取方法.基于所建立的高频光电晶体管的SPICE模型等效电路进行仿真，所得到的仿真结果能够完整描述光电晶体管的电学特性和光学特性，并验证了模型在器件模拟与电路应用上的可行性，表明本文所提出的SPICE模型和参数提取方法，对于基于高频光电晶体管的系统仿真，具有参考价值.

关键词: 光电晶体管, 参数提取, SPICE模型, 高频, TCAD模型

Abstract:

Silicon-based phototransistors have broad application prospects in the fields of high-frequency communication, automatic control, and power systems. From the perspective of system verification and simulation, there is an urgent need to establish an equivalent circuit model of phototransistors, which needs to include electrical and optical characteristics. This paper proposes a SPICE equivalent model of high-frequency(100MHz~1GHz) silicon-based phototransistors, including the main photoelectric characteristics of the device, and the extraction method of key electrical and optical parameters in the model is established by TCAD simulation. Based on the established SPICE model equivalent circuit of the high-frequency phototransistor, the simulation results can fully describe the electrical and optical characteristics of the phototransistor, it shows that the SPICE model and parameter extraction method proposed in this paper have reference value for system simulation based on high-frequency phototransistor.

Key words: phototransistor, parameter extraction, SPICE model, high frequency, TCAD model

中图分类号:

TN364

张子同, 姜岩峰. 高频硅基光电晶体管SPICE模型的建立及关键参数的提取[J]. 电子学报, 2021, 49(8): 1645-1652.

ZHANG Zi-tong, JIANG Yan-feng. The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters[J]. Acta Electronica Sinica, 2021, 49(8): 1645-1652.

图/表 12

图1 硅基光电晶体管结构示意图

图2 光耦电路结构示意图及等效电路模型

图3 高频硅基光电晶体管TCAD仿真结果

图4 高频硅基光电晶体管的仿真特性曲线

表1 高频硅基光电晶体管模型参数

参数	物理值
RC时间响应（R₁， C₁）	R₁= 1 KΩ， C₁= 100 PF
基极发射极电容C_BE（C₂）	20 PF
基极发射极电阻R_BE （R₂）	200 Ω
基极集电极电容C_CE （C₃）	10 PF
集电极发射极电阻R_CE （R₃）	50 KΩ

图5 光电二极管MATLAB仿真结果

图6 完整的光电晶体管等效电路模型图

图7 SPICE模型的仿真特性曲线

图8 ST-1MLB光电晶体管及其测试设备

表2 光电晶体管器件参数

参数	物理值
基极发射极电阻R_BE （R₂）	500 Ω
集电极发射极电阻R_CE （R₃）	200 KΩ
总结电容C_T （C₂）	9 PF

图9 器件实测与模型仿真对比曲线

图10 模型应用电路与仿真波形

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高频硅基光电晶体管SPICE模型的建立及关键参数的提取

The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters

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