电子学报 ›› 2022, Vol. 50 ›› Issue (8): 1859-1865.DOI: 10.12263/DZXB.20210305

• 学术论文 • 上一篇    下一篇

太赫兹波导封装技术的研究与应用

刘军1, 于伟华2, 吕昕2   

  1. 1.中国电子科技集团公司第五十四研究所北京研发中心, 北京 100070
    2.北京理工大学毫米波与太赫兹技术北京市重点实验室, 北京 100081
  • 收稿日期:2021-03-03 修回日期:2021-06-23 出版日期:2022-08-25
    • 作者简介:
    • 刘 军 男,1989年生,山东人.中国电子科技集团第五十四研究所工程师,主要研究方向为太赫兹芯片电路设计、太赫兹封装结构设计等.E-mail: lj_bit@163.com
      于伟华(通讯作者) 女,1978生,内蒙古人.北京理工大学信息与电子学院副教授,博导,主要研究方向为毫米波与太赫兹电路设计、测试及系统集成技术等.
      吕 昕 男,1960年生,江苏人.北京理工大学信息与电子学院教授,博导,主要研究方向为太赫兹天线、太赫兹集成电路与系统、太赫兹成像与通信等.E-mail: lvxin@bit.edu.cn
    • 基金资助:
    • 国家自然科学基金 (61771057); 921载人航天预研项目 (060401); 国防科工局“十三五”民用航天预研项目 (B0105)

The Study and Application of Terahertz Waveguide Package

LIU Jun1, YU Wei-hua2, LÜ Xin2   

  1. 1.54th Beijing Research Institute,China Electronics Technology Group Corporation (CETC),Beijing 100070,China
    2.Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,Beijing Institute of Technology,Beijing 100081,China
  • Received:2021-03-03 Revised:2021-06-23 Online:2022-08-25 Published:2022-09-08

摘要:

对太赫兹波导封装技术进行研究,并在D波段(110~170GHz)和220GHz频段分别进行设计验证.通过金丝键合技术对研制的D波段放大器芯片进行波导封装设计,封装测试结果为:封装模块在139GHz测试得到最大增益为10.8dB,在137~144GHz频率范围内,增益大于7.8dB,输入端回波损耗优于5dB,输出端回波损耗优于8.5dB.封装与在片测试结果曲线变化趋势基本一致,但是封装后芯片性能恶化严重,封装损耗大于5dB.基于此,开展太赫兹波导-集成探针过渡结构研究,提出一种适用于太赫兹频段的波导-集成探针过渡结构,并在220GHz频段进行设计验证.模块测试结果为:在208~233GHz频带范围内,插入损耗优于3dB,回波损耗优于8dB,在224GHz频点处,获得该结构的最优性能,其插入损耗为1.3dB,回波损耗为46.4dB.该波导-集成探针过渡结构为太赫兹频段全集成芯片研制提供了经验.

关键词: 太赫兹, 波导封装, 放大器, 金丝键合, 波导-集成探针过渡

Abstract:

Research on terahertz waveguide packaging technology and design verification in D-band (110~170GHz) and 220GHz band, respectively. Based on the wire bonding method, D-band LNA module is developed with self-designed amplifier chip. The module measurement shows the peak gain is 10.8dB at 139GHz,the gain higher than 7.8dB from 137GHz to 144GHz, the measured input return loss and output return loss are better than 5 dB and 8.5dB in operating frequencies, respectively. The tendency of packaged curve is same as the on-chip measured and its value is worse than the on-chip measurement about 5dB. A waveguide-to-integrated probe transition structure for terahertz band is proposed and verified in 220GHz. The module measurement shows the return loss is better than 8dB and the insertion loss is better than 3dB during 208GHz to 233GHz and the best performance is achieved at 224GHz with insertion loss is 1.3dB and return loss is 46.4dB. The waveguide-to-integrated probe transition structure provides experience for development of fully integrated terahertz chip.

Key words: terahertz, waveguide package, amplifier, wire bonding, waveguide-to-integrated probe transition

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