电子学报 ›› 2013, Vol. 41 ›› Issue (5): 1016-1018.DOI: 10.3969/j.issn.0372-2112.2013.05.030

• 科研通信 • 上一篇    下一篇

一种新的ESD防护器件的多脉冲TLP仿真方法

丁扣宝, 黄大海   

  1. 浙江大学微电子与光电子研究所,浙江杭州 310027
  • 收稿日期:2012-07-18 修回日期:2012-12-07 出版日期:2013-05-25 发布日期:2013-05-25
  • 作者简介:丁扣宝 男,1965年生于江苏东台.浙江大学微电子与光电子研究所副教授.研究方向为微电子技术. E-mail:dingkb@zju.edu.cn
  • 基金资助:
    国家自然科学基金(No.61274035)

A Novel Multi-Pulse TLP Simulation for ESD Protection Device

DING Kou-bao, HUANG Da-hai   

  1. Institute of Microelectronics and Optoelectronics,Zhejiang University,Hangzhou,Zhejiang 310027,China
  • Received:2012-07-18 Revised:2012-12-07 Online:2013-05-25 Published:2013-05-25

摘要: 提出了一种新的集成电路ESD防护器件的TLP仿真方法,该方法类似于实际的TLP测量过程,在器件结构上施加一系列电流脉冲,获得相应的电压-时间曲线。分别截取每个电流脉冲及其电压响应70%~90%部分的平均值,取得的每一对电压和电流平均值作为I-V曲线上的一点,从而得到电流-电压特性曲线。在此基础上,不仅可得到触发电压Vt1和维持电压Vh,而且可以获取二次击穿电流It2。对LSCR的仿真结果表明仿真结果与测试结果符合的很好。

关键词: 静电放电, 仿真, 多脉冲

Abstract: A novel TLP simulation method for ESD protection device in integrated circuit is proposed,which is similar with the real TLP process.By imposing series of current pulses on the device structure,the corresponding voltage vs.time curves are obtained.The average current value in the range of 70%~90% time for each I-t curve is calculated,and so is the average voltage value,and hence the simulated I-V curve can be obtained,from which not only the trigger voltage and the holding voltage,but also the second breakdown current can be evaluated.The simulation results for LSCR fit well with the test one,from which the validity of this method can be verified.

Key words: ESD(ElectroStatic Discharge), simulation, multi-pulse

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