一种非对称双栅应变硅HALO掺杂沟道MOSFET阈值电压解析模型
辛艳辉, 段美霞
An Analytical Model of Threshold Voltage for the Asymmetrical Double-Material-Gate Strained Si HALO Doping Channel MOSFET
XIN Yan-hui, DUAN Mei-xia
电子学报
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2019, (11): 2432
-2437
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DOI: 10.3969/j.issn.0372-2112.2019.11.027
