1.2kV SiC MOSFET器件URS应力退化机理研究
黄宇, 刘斯扬, 顾春德, 马荣晶, 孙伟锋
The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress
HUANG Yu, LIU Si-yang, GU Chun-de, MA Rong-jing, SUN Wei-feng
电子学报
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2016, (1): 130
-134
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DOI: 10.3969/j.issn.0372-2112.2016.01.019
