不同栅压应力下1.8V pMOS热载流子退化机理研究
刘斯扬, 于朝辉, 张春伟, 孙伟锋, 苏巍, 张爱军, 刘玉伟, 吴世利, 何骁伟
Investigation on the Hot-Carrier-Induced Degradation for 1.8V pMOS Under Different Gate Voltage Stresses
LIU Si-yang, YU Chao-hui, ZHANG Chun-wei, SUN Wei-feng, SU Wei, ZHANG Ai-jun, LIU Yu-wei, WU Shi-li, HE Xiao-wei
电子学报
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2016, (2): 348
-352
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DOI: 10.3969/j.issn.0372-2112.2016.02.015
