The Effect of Proton Irradiation on the Electrical Properties of FP-AlGaN/GaN High Electron Mobility Transistors

doi:10.3969/j.issn.0372-2112.2016.06.027

GU Wen-ping, ZHANG Lin, YANG Xin, QUAN Si, XU Xiao-bo, YANG Li-yuan, LIU Pan-zhi

Acta Electronica Sinica ›› 2016, Vol. 44 ›› Issue (6) : 1445-1449.

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Acta Electronica Sinica ›› 2016, Vol. 44 ›› Issue (6) : 1445-1449. DOI: 10.3969/j.issn.0372-2112.2016.06.027

The Effect of Proton Irradiation on the Electrical Properties of FP-AlGaN/GaN High Electron Mobility Transistors

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2016, 44(6): 1445-1449 https://doi.org/10.3969/j.issn.0372-2112.2016.06.027

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Received	Revised	Published
2015-03-17	2015-06-23	2016-06-25
Issue Date
2016-06-25

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