The Effect of Proton Irradiation on the Electrical Properties of FP-AlGaN/GaN High Electron Mobility Transistors

doi:10.3969/j.issn.0372-2112.2016.06.027

GU Wen-ping, ZHANG Lin, YANG Xin, QUAN Si, XU Xiao-bo, YANG Li-yuan, LIU Pan-zhi

ACTA ELECTRONICA SINICA ›› 2016, Vol. 44 ›› Issue (6) : 1445-1449.

PDF(4657 KB)

ACTA ELECTRONICA SINICA ›› 2016, Vol. 44 ›› Issue (6) : 1445-1449. DOI: 10.3969/j.issn.0372-2112.2016.06.027

The Effect of Proton Irradiation on the Electrical Properties of FP-AlGaN/GaN High Electron Mobility Transistors

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

Abstract

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2016, 44(6): 1445-1449. https://doi.org/10.3969/j.issn.0372-2112.2016.06.027

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

Funding

RIGHTS & PERMISSIONS

PDF(4657 KB)

Accesses

Citation

Detail

Sections

Recommended

Received	Revised	Published
2015-03-17	2015-06-23	2016-06-25
Issue Date
2016-06-25

Please choose a citation manager

Content to export