Single Event Effect and its Hardening Technique in Nano-scale CMOS Integrated Circuits

doi:10.3969/j.issn.0372-2112.2018.10.027

ZHAO Yuan-fu, WANG Liang, YUE Su-ge, SUN Yong-shu, WANG Dan, LIU Lin, LIU Jia-qi, WANG Han-ning

ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (10) : 2511-2518.

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ACTA ELECTRONICA SINICA ›› 2018, Vol. 46 ›› Issue (10) : 2511-2518. DOI: 10.3969/j.issn.0372-2112.2018.10.027

Single Event Effect and its Hardening Technique in Nano-scale CMOS Integrated Circuits

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2018, 46(10): 2511-2518. https://doi.org/10.3969/j.issn.0372-2112.2018.10.027

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Received	Revised	Published
2016-12-19	2017-09-09	2018-10-25
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2018-10-25

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