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An Analytical Model of Threshold Voltage for the Asymmetrical Double-Material-Gate Strained Si HALO Doping Channel MOSFET
XIN Yan-hui, DUAN Mei-xia
Acta Electronica Sinica . 2019, (11): 2432 -2437 .  DOI: 10.3969/j.issn.0372-2112.2019.11.027

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