何 进, 张 兴, 黄 如, 等. 改进击穿电压和导通电阻折中性能的线性变化掺杂漂移区RESURFLDMOS晶体管[J]. 电子学报, 2002,30(2):298-300.

HE Jin, ZHANG Xing, HUANG Ru, et al. Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance[J]. Acta Electronica Sinica, 2002, 30(2): 298-300.

何 进, 张 兴, 黄 如, 等. 改进击穿电压和导通电阻折中性能的线性变化掺杂漂移区RESURFLDMOS晶体管[J]. 电子学报, 2002,30(2):298-300. DOI：

HE Jin, ZHANG Xing, HUANG Ru, et al. Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance[J]. Acta Electronica Sinica, 2002, 30(2): 298-300. DOI：