As continuously scaling down the VLSI technology

it is important to investigate the compatibility of the different advanced processes integrated together in advanced CMOS process.The impact of Ge-implantation on the work function of fully silicided NiSi (FUSI NiSi) gate is investigated.The flat band voltage (VFB) and Equivalent Oxide Thickness (EOT) data were determined by fitting the measured capacitance-voltage (C-V) curves with simulation curves.The results show that work functions of NiSi gates with and without Ge implantation vary slightly

less than 0.03eV.The increase of interface state and fixed oxide charge introduced by Ge preamorphization implantation is not observed.These results demonstrate that FUSI NiSi gate technology can be integrated with Ge preamorphization implantation in self alignment CMOS process.